Agc Inc.

Meiji Seika Kaisha, Ltd.

Sente Creations Co., Ltd.

Ichiro Ishikawa

Daijiro Akagi

Kenichi Sasaki

Shunya Taki

Hiroaki Iwaoka

Toshiyuki Uno

Hirotomo Kawahara

Takuma Kato

Haruo Ogura

Motoo Hozumi

Tsuneo Itoh

Norio Kawahara

Yoshio Honma

Hiroyoshi Kamei

Wataru Nishida

A reflective mask blank containing a substrate, a multilayer reflective film that reflects EUV light, and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, and the phase shift film being arranged in this order. The phase shift film contains a compound containing Ru and Cr, an element ratio between Cr and Ru (Cr:Ru) in the phase shift film is 5:95 to 42:58, and a melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy the following relation (1):0.625MP1+MP2≤1000  (1).

Reflective mask blank, reflective mask, method of manufacturing reflective mask blank, and method of manufacturing reflective mask

A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layerincluding ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.

Reflective mask blank for EUV lithography, mask blank for EUV lithography, and manufacturing methods thereof

A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3dor a peak of 4fof the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.

A reflective mask blank for EUV lithography includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light. The substrate, the multilayer reflective film, the protection film, and the absorption film are arranged in this order from bottom to top. The protection film includes an upper layer made of a rhodium-based material containing Rh as a main component that contains only Rh, or contains Rh and at least one element selected from a group consisting of N, O, C, B, Ru, Nb, Mo, Ta, Ir, Pd, Zr, and Ti; and a lower layer satisfying a condition<−0.150.16in an EUV region where n represents a refractive index and k represents an extinction coefficient.

A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; and a phase shift film that shifts a phase of the EUV light, in this order. The phase shift film contains a compound containing ruthenium (Ru) and an element X2 different from Ru. A melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy a relation of0.625MP1+MP2&#x2264;1000.

A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2&#x3b8;: from 20&#xb0; to 50&#xb0; by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0&#xb0; or more.

A running toy shooting apparatus having a toy holder which holds a running toy having a flywheel as drive wheel and is movable between a starting position and a shooting position located in front of the starting position, a spring for driving the toy holder up to the shooting position, a stopper for retaining the running toy held by the holder means, a releasing means for releasing the running toy from the stopper to move the toy holder to the shooting position by the spring, and an energizer for energizing the flywheel of the running toy at the starting position.

Running toy shooting apparatus

As new compounds are now provided 7,7,8,8,-tetramethyl-cis-diaza-bicyclo{4.2.0}octane-3,5,-dione derivatives which have an activity to induce the differentiation of tumor cells and are useful as antitumor agent, and which also have an antiviral activity against various viruses and are useful as antiviral agent. These new derivatives may be produced by a photo-addition reaction of a uracil compound with 2,3-dimethyl-2-butene.

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Tokyo, Japan

Ichiro Ishikawa