Nec Corporation

Japan E.m. Co., Ltd.

Other

Nitto-denko Corporation

Zeon Corporation

Ichiro Hazeyama

Sakae Kitajo

Masahiro Kubo

Kazuhiro Ikuina

Takao Yamazaki

Yoshimichi Sogawa

Kazuhiko Futakami

Akeo Katahira

Yuzo Shimada

Koji Matsui

Kazumasa Igarashi

Hidehiko Kuroda

Hirobumi Inoue

Mitsuru Kimura

Masaru Terashima

Jun Ishida

Hiroshi Noro

Shinichi Ishiduka

Susumu Nanko

Hitoshi Anma

Tosiji Yamada

To provide a support for manufacturing semiconductor packages which has excellent durability in treatments such as polishing, heating, exposing/developing, plating, and vacuuming; a use of the support for manufacturing semiconductor packages; and a method of manufacturing semiconductor packages. The support includes a substrate layer and an adhesive layer adjacent to the substrate layer, wherein the substrate layer is formed of an alicyclic structure-containing resin film.

Support for manufacturing semiconductor packages, use of support for manufacturing semiconductor packages, and method for manufacturing semiconductor packages

A semiconductor device is provided including a semiconductor element having a circuit and at least one electrode of the circuit, a flexible substrate having at least one electrode pad and surrounding the semiconductor element, a conductor for connecting the electrode with the electrode pad, and a plurality of solder bumps on the electrode pad, wherein at least a first portion between a surface facing the solder bumps of the semiconductor element and the flexible substrate is not fixed by adhesion.

Semiconductor device and method for manufacturing the same, circuit board, electronic apparatus, and semiconductor device manufacturing apparatus

An object of the present invention is to provide an electronic part device which can be repaired even in the case of an electronic part device having a malfunction in electrical connection after carrying out underfill. The present invention is an electronic part device in which a semiconductor element (flip chip) () is mounted on a wiring circuit substrate () under such a state that an electrode part for connection (joint ball) disposed on the semiconductor element (flip chip) () and a circuit electrode () disposed on the wiring circuit substrate () are facing with each other. In addition, the gap between the wiring circuit substrate () and the semiconductor element (flip chip) () is filled by a filling resin layer () comprising a liquid epoxy resin composition which comprises the following component (D) and the following components (A) to (C).

Electronic component unit

A semiconductor package has a semiconductor device chip and a flexible substrate having a thermoplastic insulating resin layer. An electrode provided on the flexible substrate is connected to a predetermined electrode of the semiconductor device chip and sealed by the thermoplastic insulating resin layer. The flexible substrate is bent and provided with electrodes on the electrode-bearing and other surfaces. The flexible substrate has multi-layered wirings. Grooves or thin layer portions having a different number of wiring layers are formed at bends of the flexible substrate or regions including the bends, thereby creating a cavity at a portion in which a semiconductor device is packaged. Then, the flexible substrate is bent at predetermined positions to form a semiconductor package which does not depend on the outer dimensions of the semiconductor device chip.

Semiconductor package and laminated semiconductor package

A method of arranging microspheres with liquid, a microsphere arranging device, and a semiconductor device are provided. The method comprising the steps of placing the semiconductor device with a large number of pads with holes, on a loading table with a variable tilt angle, and pouring microspheres together with conductive liquid held in a holding container onto the semiconductor device. The microspheres are storably placed in the holes on the pads of the semiconductor device. The non-stored microspheres and conductive liquid are accumulated in a receiving tank, and the conductive liquid including the accumulated microspheres are transferred to the holding container by a pump.

Method of arranging microspheres with liquid, microsphere arranging device, and semiconductor device

Conductive balls are transferred from a pallet onto an array of conductive pads on a semiconductor chip by means of a transfer apparatus; the transfer apparatus includes a pallet formed with an array of recesses same in pattern as the array of conductive pads, a movable head formed with an array of vacuum holes and a driving mechanism for moving the head from an idle position onto the pallet and from the pallet to the semiconductor chip; when the head is moved to the pallet, the vacuum holes are connected to the recesses so as to confine the conductive balls in the narrow spaces; the vacuum is developed; then the conductive balls are traveled through the closed spaces to the vacuum holes; even if the conductive balls have been charged, the conductive balls are never attracted to the adjacent balls, and are surely captured by the vacuum holes.

Transfer apparatus for arraying small conductive bumps on a substrate and/ or chip

Transfer apparatus for arraying small conductive bumps on substrate and/ or chip

An electronic component is described, which contains a printed circuit board having electrodes for connection and a semiconductor chip having electrodes for connection which is mounted on said circuit board with their electrodes facing those of the circuit board, the gap between the circuit board and the semiconductor chip being filled with a sealing resin layer, wherein the sealing resin layer is formed of a liquid epoxy resin composition containing (A) a liquid epoxy resin, (B) a curing agent, (C) an inorganic filler, and (D) an N,N,N&prime;,N&prime;-tetrasubstituted fluorine-containing aromatic diamine derivative.

Electronic component

A glass having an oxide-converted composition of 35 to 65 wt % of SiO , 5 to 35 wt % of B O , 2 to 20 wt % of CaO, 5 to 25 wt % of Al O where the ratio of CaO to Al O is 1/1 to 1/2.5, 0.5 to 5 wt % of TiO , 0.5 to 5 wt % of ZrO , 0.5 to 5 wt % of ZnO, 0 to 5 wt % of MgO, 0 to 5 wt % of SrO, 0 to 5 wt % of BaO and 0 to 1 wt % of the total of group 1A element oxides such as Na O, K O and Li O, or a glass having an oxide-converted composition of 10 to 45 wt % of SiO , 20 to 50 wt % of CaO, 20 to 45 wt % of Al O , 0.1 to 5 wt % of MgO, 0.1 to 5 wt % of SrO, 0.1 to 5 wt % of BaO, 0.1 to 5 wt % of TiO , 0.1 to 5 wt % of ZnO, 0.1 to 5 wt % of ZrO and 0 to 3 wt % of a group 1A element oxide has a low glass softening point, can be calcined as a composite with a variety of ceramics at a temperature below 1000&deg; C., precipitates crystals during the calcination process, and can provide a glass ceramic exhibiting a low dielectric constant and a low dielectric loss.

Low-temperature calcined glass ceramic and a manufacturing process therefor

A low temperature firing glass-ceramic substrate comprising a borosilicate glass, .alpha.-alumina, .gamma.-alumina, and mullite crystals crystallized out in a dispersed form from the borosilicate glass and the .gamma.-alumina, and a production process of the substrate. It is an object of this invention to provide a glass-ceramic substrate, which is low in dielectric constant and dielectric loss and high in strength and is useful for multilayer wiring.

Low temperature firing glass-ceramic substrate and production process

A multi-layer wiring substrate includes an insulating layer which is essentially formed of a silica sintered product, and a conductor layer formed on an upper surface of the insulating layer from an electrically conductive material. The multi-layer wiring substrate is produced by forming a green sheet from a starting powder such as an ultrafine powder of amorphous silica having an average particle size of several to tens nm, and firing or calcining the green sheet at a temperature of 800.degree. to 1,200.degree. C. in an atmosphere containing steam to provide a silica sintered product which is sintered to a sufficient extent and has a high strength. The starting powder has a composition which comprises 95.0 to 99.5% by weight of a fine silica powder, 0.05 to 5.0% by weight of an alkaline earth metal compound, or comprises 95.0 to 99.0% by weight of a fine silica powder and 1.0 to 5.0% by weight of B.sub.2 O.sub.3. The silica sintered product has a sufficiently high strength and a dielectric constant of 4.0 at 1 MHz.

Multi-layer wiring substrate, and process for producing the same

A process for producing a silica sintered product for a multi-layer wiring substrate of the invention includes: providing a fine silica powder having an average particle size of 5 to 500 nm and a fine crystallized quartz powder having an average particle size 1 to 10 .mu.m, the fine crystallized quartz powder having a volume equal to 1 to 20% of the entire volume of the fine silica powder and the fine crystallized quartz powder; mixing the fine silica powder and the fine crystallized quartz powder with a binder and a solvent to form a silica-containing slurry; forming a green sheet by slip-casting the silica-containing slurry; and firing the green sheet at a temperature of 800.degree. to 1200.degree. C. in an atmosphere containing steam at a partial pressure of 0.005 to 0.85 atm.

Growing community of inventors

Tokyo, Japan

Ichiro Hazeyama