Microelectronics and Computer Technology Corporation

Qorvo Us, Inc.

Triquint Semiconductor Corporation

Ian Y Yee

Charles W Lin

James D Wehrly, Jr

Ebrahim Andideh

Buu Quoc Diep

Kurt George Steiner

Robert Kraft

Tarak A Railkar

Alan Sangone Chen

George Grama

Matthew Wasilik

Charles E Carpenter

Tom J Hirsch

Jean Briot

John W Curry, Ii

Suzanne Combe

Randy L German

David M Sigmond

Jeffrey D Galipeau

Rodolfo E Chang

Bang Nguyen

Hsyh-Min Hsu

Jason Wu

The present disclosure relates to a Wafer-Level-Packaged (WLP) Bulk Acoustic Wave (BAW) device that includes a BAW resonator, a WLP enclosure, and a surface mount connection structure. The BAW resonator includes a piezoelectric layer with an opening and a bottom electrode lead underneath the piezoelectric layer, such that a portion of the bottom electrode lead is exposed through the opening of the piezoelectric layer. The WLP enclosure includes a cap and an outer wall that extends from the cap toward the piezoelectric layer to form a cavity. The opening of the piezoelectric layer is outside the cavity. The surface mount connection structure covers a portion of a top surface of the cap and extends continuously over a side portion of the WLP enclosure and to the exposed portion of the bottom electrode lead through the opening of the piezoelectric layer.

Wafer-level-packaged BAW devices with surface mount connection structures

The present disclosure relates to a high-power acoustic device with improved performance. The disclosed acoustic device includes a substrate, a die-attach material, and an acoustic die. The substrate includes a substrate body and a die pad on a top surface of the substrate body. The die-attach material is a sintered material and applied over the die pad. The acoustic die is coupled to the die pad via the die-attach material. Herein, the acoustic die includes a die body and a metallization structure, which is sandwiched between the die body and the die-attach material.

High-power acoustic device with improved performance

Embodiments described herein may provide an acoustic wave device, a method of fabricating an acoustic wave device, and a system incorporating an acoustic wave device. The acoustic wave device may include a transducer disposed on a substrate, with a contact coupled with the transducer. The acoustic wave device may further include a wall layer and cap that define an enclosed opening around the transducer. A via may be disposed through the cap and wall layer over the contact, and a top metal may be disposed in the via. The top metal may form a pillar in the via and a pad on the cap above the via. The pillar may provide an electrical connection between the pad and the contact. In some embodiments, the acoustic wave device may be formed as a wafer-level package on a substrate wafer.

Acoustic wave device

Etchant solutions for titanium-tungsten, which include at least one oxidizing agent and at least one fluoride salt. Also disclosed is a method for etching TiW utilizing these etchants.

Titanium-tungsten etching solutions

A method for electrolessly plating an overcoat metal on a metal conductor disposed on a dielectric surface of a substrate. The method includes removing carbonized film from the dielectric surface by applying a plasma discharge, acid treating the metal conductor by dipping the substrate in a first acid solution in order to clean the surface of the metal conductor, activating the metal conductor to allow electroless plating thereon by dipping the substrate in a metal activator solution, deactivating the dielectric surface to prevent electroless plating thereon without deactivating the metal conductor by dipping the substrate in a second acid solution, and plating an overcoat metal on the metal conductor by dipping the substrate in an electroless plating solution so that the overcoat metal plates on and coats the metal conductor without plating on the dielectric surface.

Selective electroless plating process for metal conductors

A method for fabricating metal pillars in an electronic component. The method includes providing a base with spaced vias in a top surface, depositing an electrically conductive metal into the vias and over the top surface of the base so that a metal layer with an uneven top surface forms over the base, and planarizing the metal by polishing. The polishing can remove the entire metal layer leaving metal pillars in and aligned with the base. Or the polishing can be completed before removing the metal layer and metal above the base between the vias can be etched to form metal pillars with uniform heights which extend above the base. The invention is well suited for fabricating high-density multilayer copper/polyimide electrical interconnects.

Fabrication of metal pillars in an electronic component using polishing

A plating rack for use in electroplating at least one substrate includes a rack body onto which the substrate may be placed; a metal ring connected to the rack body so as to surround a substrate placed on the rack body; and bistable, single-tipped cam assemblies for holding a placed substrate in place and for making electrical contact between the metal ring and the substrate.

Electroplating method

A method for detecting the completion of electrolessly depositing metal into a via. The method includes providing a non-autocatalytic detection mask with an opening over a via containing an autocatalytic material, electrolessly depositing a conductive metal into the via which fails to plate to the mask, and continuing the deposition until metal in the via contacts the mask, at which time the electrochemical potential of the mask changes and the metal plates to and covers the entire mask. The completion of the electroless via fill can be detected by changes in both the appearance and electrochemical potential of the mask.

Detecting completion of electroless via fill

A method for patterning electroless plated metal on a polymer substrate. In a first embodiment a substrate is first coated with a polymer suitable for complexing a seed metal which can initiate electroless plating. The polymer is then mixed with a seed metal such as palladium, selectively irradiated to form the desired conductor pattern, and then etched so that the desired pattern remains. The substrate is subsequently placed in an electroless plating bath to form a metal pattern. In a second embodiment, before applying the seed metal a substrate immersed in a polymer solution suitable for complexing a seed metal can be selectively irradiated to selectively deposit polymer on the substrate, followed by applying a seed metal to form a polymer-seed metal mixture and an electroless plating bath. In addition, an alkaline chemical may be added to an acidic polymer to prevent the polymer from etching metal on the substrate.

Method for patterning electroless plated metal on a polymer substrate

A plating rack for use in electroplating at least one substrate includes a rack body onto which the subtrate may be placed; a metal ring connected to the rack body so as to surround a substrate placed on the rack body; and bistable, single-tipped cam assemblies for holding a placed substrate in place and for making electrical contact between the metal ring and the substrate.

Plating rack

An improved method for preparing high temperature Bi-Sr-Ca-Cu-O superconductive films utilizing spray pyrolysis. The method can further include an additional annealing step to improve the electrical transport properties.

Spray pyrolysis process for preparing superconductive films

A process and solution for selectively etching copper. The etching is effected by a nonaqueous solution of dimethyl sulfoxide and a halocarbon compound.

Copper etching solution and method

A method of building a multilevel electrical interconnect supported by metal pillars with air as a dielectric. The metal conductors and metal support pillars are formed using a photo-imagible polymer which serves the function of patterning and also provides a temporary support during construction.

Growing community of inventors

Austin, TX, United States of America

Ian Y Yee