Taiwan Semiconductor Manufacturing Comp. Ltd.

TSMC Nanjing Company, Limited

Via Technologies, Inc.

I-Chih Chen

Chih-Mu Huang

Fu-Tsun Tsai

Ying-Hao Chen

Ru-Shang Hsiao

Wen-Chang Kuo

Jung-Chi Jeng

Ying-Lang Wang

Ching-Pin Lin

Sheng-Lin Hsieh

Chi-Cherng Jeng

Volume Chien

Yung-Fa Lee

Ting-Chun Kuan

Kuan Jung Chen

Ching-Pei Hsieh

Kuan-Jung Chen

Hsin-Chi Chen

Yi-Chun Huang

Kun-Huei Lin

Kai-Di Wu

Hung-Ta Huang

Chun-Wei Kuo

Chih-Ming Hsieh

Meng-Yi Wu

Ming-Feng Lee

Tong Jun Huang

Ling-Sung Wang

Jen-Pan Wang

Tsung-Yu Tsai

Jiun-Jie Huang

Shang-Yen Wu

Yi-Sheng Liu

Ko-Min Lin

A method of forming a semiconductor device structure includes forming a first resist structure over a hard mask. The method further includes patterning the first resist structure to form a trench therein. The method further includes performing a first hydrogen plasma treatment to the patterned first resist structure, wherein the first hydrogen plasma treatment is configured to smooth sidewalls of the trench. The method further includes patterning the hard mask using the patterned resist structure as an etch mask. The method further includes forming a second resist structure over the patterned hard mask. The method further includes patterning the second resist structure to form an opening therein. The method further includes performing a second hydrogen plasma treatment to the patterned second resist structure. The method further includes patterning the patterned hard mask using the patterned second resist structure as a second etch mask.

Trench etching process for photoresist line roughness improvement

A semiconductor device is provided. The semiconductor device includes a semiconductor substrate. The semiconductor device includes an isolation structure in the semiconductor substrate. The isolation structure surrounds an active region of the semiconductor substrate. The semiconductor device includes a gate over the semiconductor substrate. The gate is across the active region and extends onto the isolation structure. The semiconductor device includes a support film over the isolation structure. The support film is a continuous film which continuously covers the isolation structure and the gate over the isolation structure.

Semiconductor device with gate

A method of forming a semiconductor structure includes forming a plurality of lower level conductive lines in a first dielectric layer. The plurality of lower level conductive lines includes a first lower level conductive line. The method further includes recessing portions of the first lower level conductive line below a top surface of the first dielectric layer to form a recess, forming a dielectric cap in the recess, depositing a second dielectric layer over the first dielectric layer. Forming a via opening exposes a portion of the second lower level conductive line. The method further includes forming an upper level conductive line and a via in the trench and in the via opening, respectively. The via couples the upper level conductive line to the second lower level conductive line, and the upper level conductive line overlaps with the dielectric cap.

Method of back end of line via to metal line margin improvement

A semiconductor device includes: first and second fin structures, disposed on a substrate, that respectively extend in parallel to an axis; a first gate feature that traverses the first fin structure to overlay a central portion of the first fin structure; a second gate feature that traverses the second fin structure to overlay a central portion of the second fin structure; a first spacer comprising: a first portion comprising two layers that respectively extend from sidewalls of the first gate feature toward opposite directions of the axis; and a second portion comprising two layers that respectively extend from sidewalls of the first portion of the first spacer toward the opposite directions of the axis; and a second spacer comprising two layers that respectively extend from sidewalls of the second gate feature toward the opposite directions of the axis.

Semiconductor device and method of manufacturing the same

A method of forming a semiconductor device structure includes forming a resist structure over a substrate, the resist structure includes an anti-reflective coating (ARC) layer and a photoresist layer over the ARC layer. The method further includes patterning the photoresist layer to form a trench therein. The method further includes performing a hydrogen plasma treatment to the patterned photoresist layer, wherein the hydrogen plasma treatment is configured to smooth sidewalls of the trench, and the hydrogen plasma treatment is performed at a temperature ranging from about 200° C. to about 600° C. The method further includes patterning the ARC layer using the patterned photoresist layer as a etch mask.

A semiconductor device includes a semiconductor substrate having a first region and a second region, insulators, gate stacks, and first and second S/Ds. The first and second regions respectively includes at least one first semiconductor fin and at least one second semiconductor fin. A width of a middle portion of the first semiconductor fin is equal to widths of end portions of the first semiconductor fin. A width of a middle portion of the second semiconductor fin is smaller than widths of end portions of the second semiconductor fin. The insulators are disposed on the semiconductor substrate. The first and second semiconductor fins are sandwiched by the insulators. The gate stacks are over a portion of the first semiconductor fin and a portion of the second semiconductor fin. The first and second S/Ds respectively covers another portion of the first semiconductor fin and another portion of the second semiconductor fin.

Semiconductor device and manufacturing method thereof

An encoding method, playing method and apparatus for image stabilization of panoramic video, and a method for evaluating image stabilization algorithm are provided. The image stabilization method for the panoramic video is applicable to an electronic apparatus including a processor. In the method, a plurality of image frames of a panoramic video is captured, and each image frame is transformed into a plurality of projection frames on a plurality of faces of a cubemap. Then, variations of triaxial displacements and attitude angles between the projection frames transformed onto each of the faces and adjacent in time are calculated. The variations of triaxial displacements and attitude angles are smoothed and recorded as movement information. While playing the panoramic video, the panoramic video is corrected by the movement information and played. Thus, it is possible to reduce the amount of calculation required for the stabilization calculations on the captured video.

Encoding method, playing method and apparatus for image stabilization of panoramic video, and method for evaluating image stabilization algorithm

A method for forming a semiconductor device is provided. The method includes forming an isolation structure in a semiconductor substrate. The method includes forming a gate over the semiconductor substrate. The method includes forming a support film over the isolation structure. The support film is a continuous film which continuously covers the isolation structure and the gate over the isolation structure, the support film conformally covers a first portion of a top surface and a second portion of a first sidewall of the gate, the top surface faces away from the semiconductor substrate, the support film and a topmost surface of the active region do not overlap with each other, and the topmost surface faces the gate. The method includes after forming the support film, forming lightly doped regions in the semiconductor substrate and at two opposite sides of the gate.

Method of forming semiconductor device with gate

A semiconductor device includes a substrate, a first fin extending from the substrate, a first gate structure over the substrate and engaging the first fin, and a first epitaxial feature partially embedded in the first fin and raised above a top surface of the first fin. The semiconductor device further includes a second fin extending from the substrate, a second gate structure over the substrate and engaging the second fin, and a second epitaxial feature partially embedded in the second fin and raised above a top surface of the second fin. A first depth of the first epitaxial feature embedded into the first fin is smaller than a second depth of the second epitaxial feature embedded into the second fin.

Method semiconductor device fabrication with improved epitaxial source/drain proximity control

A method of forming a semiconductor device structure is provided. The method includes forming a resist structure over a substrate. The resist structure includes an anti-reflective coating (ARC) layer and a photoresist layer over the ARC layer. The method further includes patterning the photoresist layer to form a trench therein. The method further includes performing a hydrogen plasma treatment to the patterned photoresist layer. The hydrogen plasma treatment is configured to smooth sidewalls of the trench without etching the ARC layer. The method further includes patterning the ARC layer using the patterned photoresist layer as a etch mask.

A semiconductor structure includes a first conductive line and a second conductive line in a first dielectric layer, and a third conductive line in a second dielectric layer overlying the first dielectric layer. The first conductive line and the second conductive line each extend along a first direction. The third conductive line extends along a second direction different from the first direction and above at least the second conductive line. The semiconductor structure further includes a via in the second dielectric layer and electrically connecting the second conductive line and the third conductive line. The via lands on a portion of the second conductive line. The semiconductor structure further includes a dielectric cap over the first conductive line. A bottom surface of the dielectric cap is below a top surface of the first dielectric layer.

Back end of line via to metal line margin improvement

A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a gate structure over the substrate. The semiconductor device structure also includes a source/drain feature in the substrate, protruding from the substrate, and on a sidewall surface of the gate structure. The semiconductor device structure also includes an insulating barrier structure in the substrate and partially covering the bottom and sidewalls of the source/drain feature.

Source/drain structure with barrier in FinFET device and method for forming the same

A semiconductor structure includes an active semiconductor fin having a first height, a dummy semiconductor fin adjacent to the active semiconductor fin and having a second height less than the first height, an isolation structure between the active semiconductor fin and the dummy semiconductor fin, and a dielectric cap over the dummy semiconductor fin. The dielectric cap is separated from the active semiconductor fin.

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Tainan, Taiwan

I-Chih Chen