Samsung Electronics Co., Ltd.

Hyunsoo Chung

Myungkee Chung

Inyoung Lee

Ho-jin Lee

Gilheyun Choi

Chanho Lee

Taewon Yoo

Pil-Kyu Kang

Byung Lyul Park

Kyu-ha Lee

Inhyo Hwang

Young Lyong Kim

In-Young Lee

Hansung Ryu

Tae-Je Cho

Taeje Cho

Younglyong Kim

Donghyeon Jang

Chajea Jo

Jongyeon Kim

YongSoon Choi

Jinkuk Bae

Myeong Soon Park

Byung-Lyul Park

Ae-Nee Jang

Seokho Kim

Won-young Kim

Seungduk Baek

Jinchan Ahn

Moon Gi Cho

Seyoung Jeong

Keum-hee Ma

A semiconductor package includes a package substrate and a plurality of sub-packages provided on the package substrate. Each of the plurality of sub-packages includes a semiconductor chip, an interposer provided adjacent to the semiconductor chip, the interposer including a plurality of first through-silicon vias, an encapsulator provided between the semiconductor chip and the interposer, and a redistribution layer provided on the interposer, the encapsulator and the semiconductor chip. The semiconductor chip includes a semiconductor substrate having a first surface and a second surface opposite the first surface and a plurality of chip pads provided on the first surface. The redistribution layer includes a plurality of redistribution pads and a horizontal wiring provided between the plurality of redistribution pads and the plurality of first through-silicon vias. The redistribution layer is provided on the second surface of the semiconductor substrate, and extends on the encapsulator and the interposer.

Semiconductor package including through-silicon via and method of forming the same

A semiconductor device includes a peripheral circuit structure including peripheral circuits on a substrate and first bonding pads electrically connected to the peripheral circuits and a cell array structure including memory cells on a semiconductor layer and second bonding pads electrically connected to the memory cells and bonded to the first bonding pads. The cell array structure includes a stacked structure including insulating layers and electrodes, an external connection pad on a surface of the semiconductor layer, a dummy pattern at a same level as the semiconductor layer relative to the substrate, and a photosensitive insulating layer on the semiconductor layer and the dummy pattern. A first thickness of a portion of the photosensitive insulating layer vertically overlapping the external connection pad is greater than a second thickness of another portion of the photosensitive insulating layer vertically overlapping the dummy pattern.

Semiconductor device

A semiconductor package includes a package substrate with a first vent hole, a first semiconductor chip mounted the package substrate, an interposer including supporters on a bottom surface of the interposer and a second vent hole, wherein the supporters contact a top surface of the first semiconductor chip, and the interposer is electrically connected to the package substrate through connection terminals. The semiconductor package further include a second semiconductor chip mounted on the interposer, and a molding layer disposed on the package substrate to cover the first semiconductor chip, the interposer, and the second semiconductor chip.

Semiconductor package

A semiconductor package including: a redistribution layer including redistribution line patterns, redistribution vias connected to the redistribution line patterns, and a redistribution insulating layer surrounding the redistribution line patterns and the redistribution vias; semiconductor chips including at least one upper semiconductor chip disposed on a lowermost semiconductor chip of the semiconductor chips, wherein the at least one upper semiconductor chip is thicker than the lowermost semiconductor chip; bonding wires each having a first end and a second end, wherein the bonding wires connect the semiconductor chips to the redistribution layer, wherein the first end of each of the bonding wires is connected to a respective chip pad of the semiconductor chips and the second end of each of the bonding wires is connected to a respective one of the redistribution line patterns; and a molding member surrounding, on the redistribution layer, the semiconductor chips and the bonding wires.

Semiconductor package, and a package on package type semiconductor package having the same

A semiconductor package includes a first semiconductor chip on a substrate, a buried solder ball on the substrate and spaced apart from the first semiconductor chip, a first molding layer on the substrate and encapsulating and exposing the first semiconductor chip and the buried solder ball, a second semiconductor chip on the first molding layer and vertically overlapping the buried solder ball and a portion of the first semiconductor chip, and a second molding layer on the first molding layer and covering the second semiconductor chip. The second semiconductor chip is supported on the first semiconductor chip through a dummy solder ball between the first and second semiconductor chips. The second semiconductor chip is connected to the buried solder ball through a signal solder ball between the buried solder ball and the second semiconductor chip.

Semiconductor package and method of fabricating the same

Disclosed is a semiconductor package comprising a semiconductor chip and a redistribution layer. The semiconductor chip includes a semiconductor substrate, a passivation layer, and first power, second power, and signal pads exposed from the passivation layer. The redistribution layer includes a photosensitive dielectric layer, and first to third redistribution patterns and a high-k dielectric pattern that are in the photosensitive dielectric layer. The first, second, and third redistribution patterns are respectively connected to the first power, second power, and signal pads. The high-k dielectric pattern is between the first and second redistribution patterns. The photosensitive dielectric layer includes a first dielectric material. The high-k dielectric pattern includes a second dielectric material whose dielectric constant greater than that of the first dielectric material. The high-k dielectric pattern is in contact with the passivation layer. The passivation layer includes a dielectric material different from the first and second dielectric materials.

A semiconductor package includes a chip including a pad; a first insulation pattern on the chip and exposing the pad; a redistribution layer (RDL) on an upper surface of the first insulation pattern and connected to the pad; a second insulation pattern on the upper surface of the first insulation pattern and including an opening exposing a ball land of the RDL and a patterned portion in the opening; an under bump metal (UBM) on upper surfaces of the second insulation pattern and patterned portion and filling the opening, the UBM including a first locking hole exposing an edge of an upper surface of the ball land; and a conductive ball on an upper surface of the UBM and including a first locking portion in the first locking hole. The first locking hole may be about 10% to about 50% of the area of the UBM upper surface.

Semiconductor package and method of manufacturing the same

A semiconductor device includes a semiconductor substrate, a conductive pad disposed on the semiconductor substrate, and a pillar pattern disposed on the conductive pad. The semiconductor device further includes a solder seed pattern disposed on the pillar pattern, and a solder portion disposed on the pillar pattern and the solder seed pattern. A first width of the solder seed pattern is less than a second width of a top surface of the pillar pattern.

Semiconductor device and method of fabricating the same

A semiconductor package includes a semiconductor chip including a contact pad on an active surface, a first insulating layer on the active surface including a first opening that exposes the contact pad, a redistribution layer connected to the contact pad and extending to an upper surface of the first insulating layer, a second insulating layer on the first insulating layer and including a second opening that exposes a contact region of the redistribution layer, a conductive post on the contact region, an encapsulation layer on the second insulating layer and surrounding the conductive post, and a conductive bump on an upper surface of the conductive post. The conductive post includes an intermetallic compound (IMC) layer in contact with the conductive bump. An upper surface of the IMC layer is lower than an upper surface of the encapsulation layer.

Semiconductor package with conductive bump on conductive post including an intermetallic compound layer

A semiconductor device including a substrate, an insulating layer on the substrate and including a trench, at least one via structure penetrating the substrate and protruding above a bottom surface of the trench, and a conductive structure surrounding the at least one via structure in the trench may be provided.

Semiconductor device and method for manufacturing the same

A semiconductor package includes a package substrate, a lower package structure on the package substrate that includes a mold substrate, a semiconductor chip in the mold substrate having chip pads exposed through the mold substrate, spacer chips in the mold substrate and spaced apart from the semiconductor chip, and a redistribution wiring layer on the mold substrate that has redistribution wirings electrically connected to the chip pads, first and second stack structures on the lower package structure spaced apart from each other, each of the first and second stack structures including stacked memory chips, and a molding member covering the lower package structure and the first and second stack structures, wherein the mold substrate includes a first covering portion covering side surfaces of the semiconductor chip and the spacer chips, and a second covering portion covering a lower surface of the semiconductor chip.

Semiconductor package with stack structure and method of manufacturing the semiconductor package

A semiconductor package includes a bottom package and an upper redistribution layer disposed on the bottom package. The bottom package includes a substrate and a semiconductor chip disposed on the substrate. A conductive pillar extends upwardly from the substrate and is spaced apart from the semiconductor chip. A mold layer is disposed on the substrate and encloses the semiconductor chip and lateral side surfaces of the conductive pillar. The conductive pillar includes a connection pillar configured to electrically connect the substrate to the upper redistribution layer and an alignment pillar that is spaced apart from the connection pillar. The upper redistribution layer includes a redistribution metal pattern configured to be electrically connected to the connection pillar. A first insulating layer is in direct contact with a top surface of the redistribution metal pattern. A top surface of the alignment pillar is in direct contact with the first insulating layer.

A semiconductor package is provided including a first semiconductor package including a first semiconductor chip. The first semiconductor chip includes a first surface and a second surface opposite to the first surface. A second semiconductor package is disposed on the first semiconductor package. The second semiconductor package includes a second redistribution layer including a redistribution line. A second semiconductor chip is disposed on the second redistribution layer. A thermal pillar is disposed on the second redistribution layer. A heat radiator is disposed on the second semiconductor package and connected to the thermal pillar. The redistribution line is connected to the first semiconductor chip.

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Hwaseong-si, South Korea

Hyunsoo Chung