Asm IP Holding B.v.

Hyung Wook Noh

Seung Woo Choi

Dae Youn Kim

Hyun Soo Jang

Yong Min Yoo

Young Hoon Kim

Hak Joo Lee

Dong Seok Kang

Jeong Jun Woo

Provided is a method of forming a thin film having a target thickness T on a substrate by an atomic layer deposition (ALD) method. The method includes n processing conditions each having a film growth rate that is different from the others, and determining ato athat are cycles of a first processing condition to an n-th processing condition so that a value of |T&#x2212;(a&#xd7;G+a&#xd7;G+ . . . +a&#xd7;G)| is less than a minimum value among G, G, . . . , and G, where n is 2 or greater integer, G, . . . , and Grespectively denote a first film growth rate that is a film growth rate of the first processing condition, . . . and an n-th film growth rate that is a film growth rate of the n-th processing condition, and the film growth rate denotes a thickness of a film formed per a unit cycle in each of the processing conditions. The film forming method may precisely and uniformly control a thickness of the thin film when an ALD is performed.

Method of forming thin film

A method of depositing a thin film includes: supplying a first source gas to a reactor during a first time period; supplying a purge gas to the reactor during a second time period; supplying a second source gas to the reactor during a third time period; and supplying the purge gas to the reactor during a fourth time period, wherein the first source gas and the second source gas comprise polymer precursors, and wherein the first source gas and the second source gas are supplied at a temperature that is less than 100&#xb0; C. or about 100&#xb0; C. According to the method, uniformity and step coverage of a thin film can be improved by depositing an amorphous carbon layer using polymer precursors according to an Atomic layer deposition (ALD) method.

Method of depositing thin film

Substrate supporter for semiconductor deposition apparatus

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Anyang-si, South Korea

Hyung Wook Noh