Samsung Electronics Co., Ltd.

Hyung-ho Ko

Jae-Hyuck Choi

Jong-Keun Oh

Chan-Uk Jeon

Sung-jae Han

Ho-Young Kim

Byung-Gook Kim

Il-Yong Jang

Won-Jung Kim

Han-Shin Lee

Kyung-noh Kim

Jun-Youl Choi

Keun-Hwan Park

Jin-sang Yoon

Yun-song Jeong

Jung-jin Kim

Dae-Hyuk Kang

Jin-su Kim

Jin-sik Jung

Hae-young Jeong

Soo-jung Kang

Soo-Wan Koh

A phase shift mask includes a substrate, a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength and the substrate being substantially transparent to the light of the first wavelength such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern, and a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern.

Phase shift mask

A photomask includes a transparent substrate, a mask pattern formed on the substrate, and a protective layer pattern covering side walls of the mask pattern, wherein a top of the protective layer pattern is exposed.

Method of manufacturing photomask

Photomask and method of forming the same and methods of manufacturing electronic device and display device using the photomask

Photomask and method of manufacturing the same

A megasonic cleaning method and a megasonic cleaning apparatus are provided. Microcavitation bubbles may be formed by applying an electromotive force to a cleaning solution using a megasonic energy in a separate room from an object to be cleaned. The microcavitation bubbles having a stable oscillation among the formed microcavitation bubbles may be moved to the object to be cleaned. A surface of the object to be cleaned may be cleaned using the microcavitation bubbles having the stable oscillation. Particles attached onto the surface of the object to be cleaned may be effectively removed while preventing pattern damage.

Method of megasonic cleaning of an object

A reflective photomask blank, a reflective photomask and an integrated circuit device manufactured by using a reflective photomask, include a multi-layered reflection layer; a capping layer on the multi-layered reflection layer and including a first transition metal; a passivation film contacting at least a portion of the capping layer on a side opposite to the multi-layered reflection layer and including a second transition metal and a nitrogen (N) atom; and a light absorption pattern covering a portion of the capping layer.

Reflective photomask blank, reflective photomask, and integrated circuit device manufactured by using reflective photomask

Provided is a method and apparatus for cleaning a photomask. The photomask including a first region and a second region surrounding the first region, a pattern to be protected disposed on the first region, and a material to be removed exists on the second region. A cleaning liquid is sprayed from an inside region of the second region toward an outer region of the second region to remove the material, and a gas is blown from the first region toward the second region to protect the pattern.

Apparatus for cleaning photomask

In a method of manufacturing a photomask pattern, a light-shielding layer pattern and an anti-reflective layer pattern are formed sequentially on a transparent substrate. Oxidation and nitridation processes are performed on a sidewall of the light-shielding layer pattern to form a protection layer pattern on a lateral portion of the light-shielding layer pattern.

Photomasks and methods of manufacturing the same

Method and apparatus for cleaning photomask

A photomask includes an ion trapping layer and a method of manufacturing a semiconductor device uses the photomask. The photomask includes a transparent substrate and an ion trapping layer formed on a first region of the transparent substrate to trap ions present near the transparent substrate. In manufacturing a semiconductor device, a photosensitive film formed on a substrate is exposed through the photomask in which the ion trapping layer is formed on the transparent substrate, and the substrate is processed using the photosensitive film obtained as the result of the exposure.

Photomask including ion trapping layer and method of manufacturing semiconductor device using the photomask

Growing community of inventors

Hwaseong-si, South Korea

Hyung-ho Ko