Samsung Electronics Co., Ltd.

Hyun-Kyu Kang

Seung-Ki Chae

Yong-Jin Kim

Gyung-Jin Min

Seung-Young Son

Hyung-Sik Hong

Gyeong-Su Keum

Doo-Guen Song

Tae-Sub Im

Jae-Hyun Han

Sang-Yeob Cha

Gil-Jung Yun

An etching end point of a plasma etch is determined by defining an etch-stop condition. A layer formed on a substrate is etched using a plasma. A luminous intensity of the plasma is measured to determine a first luminous intensity. The luminous intensity is measured again after a predetermined time to determine a second luminous intensity. A determination is made whether a disturbance occurs. Compensation is applied to the measured luminous intensity if the disturbance occurs. A determination is made whether the measured luminous intensity or the compensated luminous intensity satisfies the etch stop condition.

Methods of determining an etching end point based on compensation for etching disturbances

In an ion implanting apparatus and an ion implanting method using the same, the ion implanting apparatus includes a disk chamber containing a rotatable disk, a wafer mounted on the rotatable disk, and a charge sensor for monitoring a charged state of the wafer, the charge sensor being fixed to the disk chamber to be adjacent to and facing a surface of the wafer. An output of the charge sensor may be used as feedback to control the charged state of the wafer.

Ion implanting apparatus and ion implanting method using the same

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Seoul, South Korea

Hyun-Kyu Kang