Konkuk University Industrial Cooperation Corp

Korea Advanced Institute of Science and Technology

Hyun Jong Chung

Hak Seong Kim

Hyun Cheol Kim

Sung Yool Choi

Han Byeol Lee

A barristor-based photodetector is disclosed. The photodetector according to an embodiment comprises: a substrate; a gate electrode which is laminated on the substrate; a first electrode and a second electrode which are laminated on the substrate and spaced apart from the gate electrode; a graphene layer which is formed between the substrate and the second electrode and extends toward the first electrode; and a gate insulating layer which is formed between the gate electrode and the graphene layer.

Method for detecting intensity as function of energy of light and devices for performing same

Disclosed are a two-dimensional semiconductor in which an energy band gap changes with thickness, a manufacturing method therefor, and a semiconductor device comprising the same. A two-dimensional semiconductor according to an embodiment comprises: a first layer having a first thickness; and a second layer having a second thickness, wherein the first thickness and the second thickness are different from each other, the first layer forms a first junction with a first electrode, and the second layer forms a second junction with a second electrode.

Growing community of inventors

Gyeonggi-do, South Korea

Hyun Jong Chung