Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Information and Communications University Educational Foundation

Hyuek Jae Lee

Tae Hun Kim

Jae Hyun Kim

Ji Hwan Hwang

Ji Seok Hong

Young Min Lee

Sang Cheon Park

Jin Hyuck Yu

Dae-Woo Kim

Min Ho Kang

Yong Hyub Won

Yong Deok Jeong

Hark Yoo

A semiconductor package includes a base structure having a base pad, a first semiconductor chip on the base structure, and having a first connection pad bonded to the base pad, a first bonding structure including an base insulation layer of a base structure and a first lower insulation layer of the first semiconductor chip bonded to the base insulation layer, a second semiconductor chip on the first semiconductor chip, and having a second connection pad connected to the first through-electrode, and a second bonding structure including a first upper insulation layer of the first semiconductor chip, and a second lower insulation layer of the second semiconductor chip bonded to the first upper insulation layer, and the first upper insulation layer has a dummy insulation portion extending onto the base structure around the first semiconductor chip.

Method of manufacturing a semiconductor package

A semiconductor package includes a base including a first bonding structure; and a first semiconductor chip, including a second bonding structure, the second bonding structure being coupled to the first bonding structure of the base, wherein the first bonding structure includes: a test pad; a first pad being electrically connected to the test pad; and a first insulating layer, wherein the second bonding structure includes: a second pad being electrically connected to the first pad; and a second insulating layer being in contact with the first insulating layer, and wherein at least a portion of the test pad is in contact with the second insulating layer.

Semiconductor package including test pad

A semiconductor package includes a substrate including a first semiconductor chip including a first wiring structure, a first bonding pad, and a first alignment key on the first wiring structure to be spaced apart in a first direction, a second semiconductor chip including a second wiring structure, a second bonding pad on the second wiring structure and connected to the first bonding pad, and a second alignment key on the second wiring structure to be spaced apart from the second bonding pad and not overlapping the first alignment key in the second direction, the first wiring structure including a first wiring pattern connected to the first bonding pad and not overlapping the first and second alignment keys in the second direction, and the second wiring structure including a second wiring pattern connected to the second bonding pad and not overlapping the first and second alignment keys in the second direction.

Semiconductor package

A semiconductor package is provided. The semiconductor package includes a lower structure including an upper insulating layer and an upper pad; and a semiconductor chip provided on the lower structure and comprising a lower insulating layer and a lower pad. The lower insulating layer is in contact with and coupled to the upper insulating layer and the lower pad is in contact with and coupled to the upper pad, and a lateral side of the semiconductor chip extends between an upper side and a lower side of the semiconductor chip and comprises a recessed portion.

Disclosed are an apparatus and method for converting the wavelength of an optical signal using a multi-mode Fabry-Perot laser diode. The apparatus controls polarization of an external pump optical signal to output a TE polarized pump optical signal, and controls polarization of a probe optical signal to output a TM polarized probe optical signal. The apparatus couples the TM polarized probe optical signal and TE polarized pump optical signal irrespective of the polarization of the optical signals. The apparatus finely controls the polarization of the pump optical signal and the polarization of the probe optical signal such that they conform to TE and TM modes of the Fabry-Perot laser diode, respectively. The Fabry-Perot laser diode injection-locks the TE polarized pump optical signal of the coupled signal to change the position of a TM mode absorption null (a point at which an output optical signal has the minimum intensity), to thereby convert the wavelength of the TE polarized pump optical signal to the wavelength of the TM polarized probe optical signal. Accordingly, a wide wavelength conversion band is provided, and inverting and non-inverting wavelength conversions are easily carried out.

Optical wavelength conversion apparatus and method using injection locking of fabry-perot laser diode

Disclosed is a fabrication method of a printed circuit board, consisting of plating a metal on a pattern-formed metallic substrate to form a conductive metal line; forming a polymer layer as a base substrate over the conductive metal line-formed metallic substrate and drying the formed polymer layer; forming a via hole in the polymer layer, followed by plugging the formed via hole by electroplating; and removing the metallic substrate. The method is advantageous in terms of maximum efficiency of use of the surface area of PCB, and fineness and high integration of circuits because of not requiring an additional etching process.

Growing community of inventors

Hwaseong-si, South Korea

Hyuek Jae Lee