Samsung Electronics Co., Ltd.

Hwan-seok Seo

Seong-sue Kim

Dong-gun Lee

In-Sung Kim

Su-Young Lee

Tae-geun Kim

Reflective masks, and methods of manufacturing the same, include a reflective multi-layer on a mask substrate, a plurality of support patterns spaced apart from one another in the main trench. The plurality of support patterns are in a main trench of the reflective multi-layer. The plurality of support patterns correspond to areas of the reflective mask not transferred onto an exposure target substrate. The support patterns partition the main trench to form a plurality of auxiliary trenches. The reflective mask further includes a light absorption pattern including a plurality of auxiliary light absorption patterns in the auxiliary trenches.

Reflective masks for use in extreme ultraviolet lithography apparatus and methods of manufacturing the same

Reflective photomask blanks are provided. The reflective photomask blank includes a multi-layered reflection layer on a photomask substrate, a capping layer directly disposed on a top surface of the multi-layered reflection layer to include transition metal and silicon, a passivation layer disposed on a surface of the capping layer opposite to the multi-layered reflection layer, and a light absorption layer on the passivation layer.

Reflective photomask blanks and reflective photomasks

A beam generator for an aerial image generating apparatus includes a laser source for emitting a laser beam and a short wavelength beam source for generating a short wavelength beam by processing the laser beam such that the short wavelength beam is coherent with and has a wavelength shorter than that of the laser beam. A spectral unit includes a quartz plate and a spectral layer coated on a surface of the quartz plate. The spectral layer has a Brewster's angle greater than 70&#xb0; with respect to the laser beam such that the short wavelength beam is reflected from the spectral unit without the laser beam, increasing the reflectivity of the shortwave beam while decreasing the reflectivity and absorptivity of the laser beam in the spectral unit.

Beam generator

An EUV projection lens includes a substrate and concentric diffraction patterns on the substrate. The concentric diffraction patterns have an out-of phase height with respect to EUV light and include a material through which the EUV light has a transmittance higher than about 50% at the out-of phase height. The EUV projection lens has a high first order diffraction light efficiency and an optic system having the EUV projection lens has a high resolution.

EUV projection lens and optic system having the same

A reflective photomask includes a phase shift object on a substrate, a reflective layer stacked on the substrate and the phase shift object, a capping layer on the reflective layer, the capping layer including at least one surface portion having a bent shape, and a light absorption pattern on the capping layer, the light absorption pattern including at least one slit exposing the surface portion of the capping layer having the bent shape.

Growing community of inventors

Suwon-si, South Korea

Hwan-seok Seo