Ultratech Stepper, Inc.

Applied Materials, Inc.

Kla-tencor Technologies Corporation

Periodic Structures, Inc.

Gazillion Bits, Inc.

Jzw LLC

Other

University of California

Nanometrics Inc.

Jsmsw Technology LLC

Kla Tencor Corporation

Hwan J Jeong

David A Markle

Thomas L Laidig

John S Petersen

Gerald John Alonzo

Christopher Dennis Bencher

David R Shafer

Russell M Hudyma

Tamer Coskun

Rudolf H Hendel

Uwe Hollerbach

Qin Zhong

Andrew V Hill

Andrew M Hawryluk

Gregory Kirk

Antoine P Manens

Mark Shi Wang

Shiow-Hwei Hwang

David S Pan

Xing Chen

Silvio J Rabello

Simon J Cohen

Russel Hudyma

Robert L Brown

Shafer David R

Richard B Ward

Mark S Wanta

Thomas Andre Casavant

Gregory L Kirk

A digital lithography system may adjust a wavelength of the light source to compensate for tilt errors in micromirrors while maintaining a perpendicular direction for the reflected light. Adjacent pixels may have a phase shift that is determined by an optical path difference between their respective light beams. This phase shift may be preselected to be any value by generating a corresponding wavelength at the light source based on the optical path difference. To generate a specific wavelength corresponding to the desired phase shift, the light source may produce multiple light components that have wavelengths that bracket the wavelength of the selected phase shift. The intensities of these components may then be controlled individually to produce an effect that approximates the selected phase shift on the substrate.

Controlling light source wavelengths for selectable phase shifts between pixels in digital lithography systems

Aspects of the present disclosure relate to methods and apparatus for correcting lithography systems. In one implementation, a method of operating a lithography system includes directing first light beams toward a reflective surface of a first substrate using an optical module. The method includes directing the first light beams collected through at least an objective lens toward a camera, and taking a plurality of first images of the first light beams. The method includes directing second light beams at an oblique angle toward a patterned surface of a second substrate using an illumination source disposed below the objective lens. The method includes directing the second light beams collected through at least an objective lens toward a camera, and taking a plurality of second images of the second light beams. The method includes determining a tip correction, a tilt correction, and an optimal vertical position for the optical module.

Methods and apparatus for correcting lithography systems

A lithography system for generating grating structures is provided having a multiple column imaging system located on a bridge capable of moving in a cross-scan direction, a mask having a grating pattern with a fixed spatial frequency located in an object plane of the imaging system, a multiple line alignment mark aligned to the grating pattern and having a fixed spatial frequency, a platen configured to hold and scan a substrate, a scanning system configured to move the platen over a distance greater than a desired length of the grating pattern on the substrate, a longitudinal encoder scale attached to the platen and oriented in a scan direction and at least two encoder scales attached to the platen and arrayed in the cross-scan direction wherein the scales contain periodically spaced alignment marks having a fixed spatial frequency.

System for making accurate grating patterns using multiple writing columns each making multiple scans

Embodiments of the present disclosure generally relate to methods and apparatus for processing one or more substrates, and more specifically to improved spatial light modulators for digital lithography systems and digital lithography methods using improved spatial light modulators. The spatial light modulator is configured such that there is a 180-degree phase shift between adjacent spatial light modulator pixels. The spatial light modulator is useful for pixel blending by forming a plurality of partially overlapping images, at least one of the plurality of partially overlapping images having at least two pixels formed by a first pair of adjacent spatial light modulator pixels having a 180-degree phase shift therebetween. The spatial light modulator results in improved resolution, depth of focus, and pixel blending.

Resolution enhanced digital lithography with anti-blazed DMD

Methods are provided and generally relate to adjusting exposure parameters of a substrate in response to an overlay error. The method includes partitioning the substrate into one or more sections. Each section corresponds to an image projection system. A total overlay error of a first layer deposited on the substrate is determined. For each section, a sectional overlay error is calculated. For each overlap area, in which two or more sections overlap, an average overlay error is calculated. The exposure parameters are adjusted in response to the total overlay error.

Piecewise alignment modeling method

A method for qualitatively detecting aberration and determine aberration types in a photolithography system is disclosed. The method includes using a digital micromirror device (DMD) pattern to project an optical signal on a reflective substrate, acquiring a return optical signal reflected from the substrate at different focus heights (ranging from above to below best focus), forming a through focus curve based off of the return optical signal at various focus heights, comparing the through focus curve to a predetermined curve&#x2014;the predetermined curve being a function of focus, and determining if a lens aberration is present. By using the existing hardware of the photolithography system to determine if a lens aberration exists, costs are maintained at a minimum and the DMD pattern creates a through focus curve (TFC) image in less than five minutes allowing for quick correction.

Empirical detection of lens aberration for diffraction-limited optical system

Methods and apparatuses are provided that determine an offset between actual feature/mark locations and the designed feature/mark locations in a maskless lithography system. For example, in one embodiment, a method is provided that includes opening a camera shutter in a maskless lithography system. Light is directed from a configuration of non-adjacent mirrors in a mirror array towards a first substrate layer. An image of the first substrate layer on a camera is captured and accumulated. Light is directed and images are captured repeatedly using different configurations of non-adjacent mirrors to cover an entire field-of-view (FOV) of the camera on the first substrate layer. Thereafter, the camera shutter is closed and the accumulated image is stored in memory.

Image improvement for alignment through incoherent illumination blending

Embodiments disclosed herein generally relate to adjusting exposure parameters of a substrate in response to an overlay error. The method includes partitioning the substrate into one or more sections. Each section corresponds to an image projection system. A total overlay error of a first layer deposited on the substrate is determined. For each section, a sectional overlay error is calculated. For each overlap area, in which two or more sections overlap, an average overlay error is calculated. The exposure parameters are adjusted in response to the total overlay error.

Direct-write lithography apparatus and methods are disclosed in which a transducer image and an image of crossed interference fringe patterns are superimposed on a photoresist layer supported by a substrate. The transducer image has an exposure wavelength and contains bright spots, each corresponding to an activated pixel. The interference image has an inhibition wavelength and contains dark spots where the null points in the crossed interference fringes coincide. The dark spots are aligned with and trim the peripheries of the corresponding bright spot to form sub-resolution photoresist pixels having a size smaller than would be formed in the absence of the dark spots.

Apparatus and method of direct writing with photons beyond the diffraction limit

Overlay measurement systems and methods are disclosed that control the relative phase between the scattered and specular components of light to amplify weak optical signals before detection. The systems and methods utilize model-based regressional image processing to determine overlay errors accurately even in the presence of inter-pattern interference.

Phase-controlled model-based overlay measurement systems and methods

Microscope apparatus and methods for imaging an object with a resolution beyond the Abbe limit are disclosed. The apparatus employs an object selectively patterned with a fluorescing material that is induced to fluoresce with one wavelength and inhibited from fluorescing with a second wavelength. Two orthogonal interference-fringe patterns are generated from four diffracted light beams of an inhibiting wavelength and superimposed on the object along with light that induces fluorescence. The interference-pattern image allows only sub-resolution-sized emission areas of the object to fluoresce. Multiple images of the fluorescing object are obtained, each corresponding to a slightly different position of the fringe patterns on the substrate. Each image is processed to yield a sparsely sampled super-resolution image. Multiple sparse images are interwoven to form a complete super-resolution image of the object.

Apparatus and methods for microscopy having resolution beyond the Abbe limit

An optical system may include an objective having at least four mirrors including an outermost mirror with aspect ratio &#x3c;20:1 and focusing optics including a refractive optical element. The objective provides imaging at numerical aperture &#x3e;0.7, central obscuration &#x3c;35% in pupil. An objective may have two or more mirrors, one with a refractive module that seals off an outermost mirror's central opening. A broad band imaging system may include one objective and two or more imaging paths that provide imaging at numerical aperture &#x3e;0.7 and field of view &#x3e;0.8 mm. An optical imaging system may comprise an objective and two or more imaging paths. The imaging paths may provide two or more simultaneous broadband images of a sample in two or more modes. The modes may have different illumination and/or collection pupil apertures or different pixel sizes at the sample.

Optical imaging system with catoptric objective; broadband objective with mirror; and refractive lenses and broadband optical imaging system having two or more imaging paths

A dark field diffraction based overlay metrology device illuminates an overlay target that has at least three pads for an axis, the three pads having different programmed offsets. The overlay target may be illuminated using two obliquely incident beams of light from opposite azimuth angles or using normally incident light. Two dark field images of the overlay target are collected using &#xb1;1diffraction orders to produce at least six independent signals. For example, the +1diffraction order may be collected from one obliquely incident beam of light and the &#x2212;1diffraction order may be collected from the other obliquely incident beam of light. Alternatively, the &#xb1;1diffraction orders may be separately detected from the normally incident light to produce the two dark field images of the overlay target. The six independent signals from the overlay target are used to determine an overlay error for the sample along the axis.

Dark field diffraction based overlay

Growing community of inventors

Los Altos, CA, United States of America

Hwan J Jeong