Stats Chippac Pte. Ltd.

HunTeak Lee

HeeSoo Lee

DeokKyung Yang

OhHan Kim

JunHo Ye

Wanil Lee

InSang Yoon

Reza A Pagaila

KiYoun Jang

YoungChul Kim

Gwang Kim

Woonjae Beak

Deokkyung Yang

Il Kwon Shim

HeeJo Chi

Sungsoo Kim

Kyunghwan Kim

KyoungHee Park

KyungMoon Kim

Sell Jung

SangDuk Lee

KyungHwan Kim

Pandi Chelvam Marimuthu

ChangOh Kim

Choon Heung Lee

Lan H Hoang

Jiwon Lee

JinHee Jung

YuJeong Jang

OMin Kwon

YiSu Park

JaeHak Yee

Steve Anderson

KooHong Lee

KeonTaek Kang

YouJoung Choi

MinKyung Kim

DaeHyeok Ha

Yongwoo Lee

Namgu Kim

Rajendra D Pendse

Byung Joon Han

WonJun Ko

SeungYong Chai

YongHee Kang

JoonYoung Choi

JaEun Yun

Seunghyun Lee

Yeongbeom Ko

Hyeonchul Lee

Daewook Yang

InHo Seo

HyunSu Tak

SangJun Park

A semiconductor manufacturing device has a cooling pad with a plurality of movable pins. The cooling pad includes a fluid pathway and a plurality of springs disposed in the fluid pathway. Each of the plurality of springs is disposed under a respective movable pin. A substrate includes an electrical component disposed over a surface of the substrate. The substrate is disposed over the cooling pad with the electrical component oriented toward the cooling pad. A force is applied to the substrate to compress the springs. At least one of the movable pins contacts the substrate. A cooling fluid is disposed through the fluid pathway.

Cooling device and process for cooling double-sided SiP devices during sputtering

A semiconductor device has a substrate and a first component disposed over a first surface of the substrate. A connector is disposed over the first surface of the substrate. A first encapsulant is deposited over the first component while the connector remains outside of the first encapsulant. A shielding layer is formed over the first encapsulant while the connector remains outside of the shielding layer. A second component is disposed over a second surface of the substrate. A solder bump is disposed over the second surface of the substrate. A second encapsulant is deposited over the second surface of the substrate. An opening is formed through the second encapsulant to expose the solder bump. A solder ball is disposed in the opening. The solder ball and solder bump are reflowed to form a combined solder bump.

Double-sided partial molded SiP module

A semiconductor manufacturing device has a strip panel and a plurality of electrical components disposed over the strip panel. An encapsulant is disposed over the electrical components using a mold gate injector and directed in a path toward higher flow resistance for the encapsulant over the electrical components. The mold gate injector can be shifted toward a side of the strip panel with the path toward higher flow resistance for the encapsulant. The mold gate injector can have a discharge port smaller than the mold gate injector directed at the path toward higher flow resistance for the encapsulant. The discharge port injector can be shifted toward a side of the strip panel with the path toward higher flow resistance for the encapsulant. An air vent and air tank can be coupled to the mold gate injector to aid in release of excess air from the encapsulant.

Semiconductor manufacturing device and method of enhancing mold gate injector and air vent to reduce voids in encapsulant

A semiconductor device has a substrate comprising a carrier and an interposer disposed on the carrier. An electrical component is disposed over a first surface of the interposer. An interconnect structure is disposed over the first surface of the interposer. An encapsulant is deposited over the electrical component, interconnect structure, and substrate. A trench is formed through the encapsulant and interposer into the carrier. A shielding layer is formed over the encapsulant and into the trench. The carrier is removed after forming the shielding layer.

Molded laser package with electromagnetic interference shield and method of making

A semiconductor device has an electrical component assembly, and a plurality of discrete antenna modules disposed over the electrical component assembly. Each discrete antenna module is capable of providing RF communication for the electrical component assembly. RF communication can be enabled for a first one of the discrete antenna modules, while RF communication is disabled for a second one of the discrete antenna modules. Alternatively, RF communication is enabled for the second one of the discrete antenna modules, while RF communication is disabled for the first one of the discrete antenna modules. A bump is formed over the discrete antenna modules. An encapsulant is deposited around the discrete antenna modules. A shielding layer is formed over the electrical components assembly. A stud or core ball can be formed internal to a bump connecting the discrete antenna modules to the electrical component assembly.

Semiconductor device and method of forming discrete antenna modules

A semiconductor device has a substrate and an electrical component disposed over a surface of the substrate. An antenna interposer is disposed over the substrate. A first encapsulant is deposited around the antenna interposer. The first encapsulant has a high dielectric constant. The antenna interposer has a conductive layer operating as an antenna and an insulating layer having a low dielectric constant less than the high dielectric constant of the first encapsulant. The antenna interposer is made from an antenna substrate having a plurality of antenna interposers. Bumps are formed over the antenna substrate and the antenna substrate is singulated to make the plurality of antenna interposers. A second encapsulant is deposited over the electrical component. The second encapsulant has a low dielectric constant less than the high dielectric constant of the first encapsulant. A shielding layer is disposed over the second encapsulant.

Semiconductor device and method of forming semiconductor package with RF antenna interposer having high dielectric encapsulation

A semiconductor device has a PCB with an antenna and a semiconductor package mounted onto the PCB. An epoxy molding compound bump is formed or disposed over the PCB opposite the semiconductor package. A first shielding layer is formed over the PCB. A second shielding layer is formed over the semiconductor package. A board-to-board (B2B) connector is disposed on the PCB or as part of the semiconductor package. A conductive bump is disposed between the semiconductor package and PCB.

Antenna-in-package devices and methods of making

A semiconductor device has a substrate. A conductive layer is formed over the substrate and includes a ground plane. A first tab of the conductive layer extends from the ground plane and less than half-way across a saw street of the substrate. A shape of the first tab can include elliptical, triangular, parallelogram, or rectangular portions, or any combination thereof. An encapsulant is deposited over the substrate. The encapsulant and substrate are singulated through the saw street. An electromagnetic interference (EMI) shielding layer is formed over the encapsulant. The EMI shielding layer contacts the first tab of the conductive layer.

Method and device for reducing metal burrs when sawing semiconductor packages

A semiconductor package has a substrate, a first component disposed over the substrate, an encapsulant deposited over the first component, and a second component disposed over the substrate outside the encapsulant. A metal mask is disposed over the second component. A shielding layer is formed over the semiconductor package. The metal mask after forming the shielding layer. The shielding layer is optionally formed on a contact pad of the substrate while a conic area above the contact pad that extends 40 degrees from vertical remains free of the encapsulant and metal mask while forming the shielding layer. Surfaces of the metal mask and encapsulant oriented toward the contact pad can be sloped. The metal mask can be disposed and removed using a pick-and-place machine.

Selective EMI shielding using preformed mask

A semiconductor device is manufactured using a support base and a filling material formed on the support base. The filling material can be a plurality of protrusions or penetrable film. The protrusions are attached to the support base with an adhesive. The protrusions have a variety of shapes such as square frustum, conical frustum, three-sided pyramid with a flat top, four-sided rectangular body, and elongated square frustum. A semiconductor wafer is disposed over the support base with the filling material extending into openings in the semiconductor wafer. The openings in the semiconductor wafer can have slanted sidewalls, or a more complex shape such as ledges and vertical projections. The filling material may substantially fill the openings in the semiconductor wafer. The protrusions may partially fill the openings in the semiconductor wafer. The protrusions occupy at least a center of the openings in the semiconductor wafer.

Semiconductor manufacturing equipment and method of providing support base with filling material disposed into openings in semiconductor wafer for support

Double-sided partial molded SIP module

A semiconductor device has a first substrate and a second substrate. An opening is formed through the second substrate. A first semiconductor component and second semiconductor component are disposed between the first substrate and second substrate. The second substrate is electrically coupled to the first substrate through the first semiconductor component. A first terminal of the first semiconductor component is electrically coupled to the first substrate. A second terminal of the first semiconductor component is electrically coupled to the second substrate. The second semiconductor component extends into the opening. An encapsulant is deposited over the first substrate and second substrate.

Semiconductor device and method of forming a 3D interposer system-in-package module

A semiconductor device has an electronic component assembly, and a plurality of discrete antenna modules disposed over the electronic component assembly. Each discrete antenna module is capable of providing RF communication for the electronic component assembly. RF communication can be enabled for a first one of the discrete antenna modules, while RF communication is disabled for a second one of the discrete antenna modules. Alternatively, RF communication is enabled for the second one of the discrete antenna modules, while RF communication is disabled for the first one of the discrete antenna modules. A bump is formed over the discrete antenna modules. An encapsulant is deposited around the discrete antenna modules. A shielding layer is formed over the electronic components assembly. A stud or core ball can be formed internal to a bump connecting the discrete antenna modules to the electronic component assembly.

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Gyeongi-do, South Korea

HunTeak Lee