Samsung Electronics Co., Ltd.

Hungbae Ahn

Sangoh Park

Sunggon Jung

Jinho Lee

Seunghune Yang

A pattern layout design method includes performing optical proximity correction (OPC) for a mask layout, thereby creating a corrected layout. Creation of the corrected layout includes creating a first corrected layout through grid snapping for an oblique edge of a mask layout designed on a grid layout, and performing optical proximity correction (OPC) for the first corrected layout, thereby creating a second corrected layout. Creation of the first corrected layout includes creating a first divisional point for the oblique edge or a residual edge, and shifting the first divisional point to one of four reference points adjacent to the first divisional point, thereby creating a first varied divisional point.

Method for designing pattern layout including oblique edges and method for manufacturing semiconductor device using the same

A method of manufacturing a photomask set includes: preparing a mask layout, the mask layout including a plurality of first layout patterns apart from one another in a first region, wherein distances between center points of three first layout patterns adjacent to one another from among the plurality of first layout patterns respectively have different values; grouping pairs of first layout patterns, in which a distance between two first layout patterns adjacent to each other does not have a smallest value, and splitting the mask layout pattern into at least two mask layouts; and forming a photomask set including at least two photomasks each including a mask pattern corresponding to the first layout pattern included in each of the mask layout patterns split into at least two mask layouts.

Method of manufacturing photomask set for forming patterns

A method of manufacturing a mask may include identifying an error pattern of final patterns formed on a substrate, correcting a first target pattern on the basis of the error pattern, fracturing a first mask layout into a plurality of first segments on the basis of the corrected first target pattern, and correcting the first mask layout by biasing a plurality of first target segments corresponding to a first final target among the plurality of segments. The first mask layout may include a first extension pattern, final targets disposed in zigzags, and the first final target corresponding to the error pattern, and each of the plurality of first segments may corresponds to one of the final targets.

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Hwaseong-si, South Korea

Hungbae Ahn