Taiwan Semiconductor Manufacturing Comp. Ltd.

Hung-Yin Lin

Chen-Hsiang Lu

Cherng-Chang Tsuei

Tz-Wei Lin

Sheng-Jen Yang

Hsien-Chieh Tsai

Chang-Sheng Lee

Wen-Che Chang

Fu-Yuan Chang

Chien-Pin Hsu

Hsien-Chie Tsai

An advanced process control (APC) method for controlling a width of a spacer in a semiconductor device includes: providing a semiconductor substrate; providing a target width of a gate; forming the gate on the semiconductor substrate, in which the gate has a measured width; depositing a dielectric layer covering the gate, in which the dielectric layer has a measured thickness; providing a target width of the spacer; determining a trim time of the dielectric layer based on the target width of the gate, the measured width of the gate, the target width of the spacer, and the measured thickness of the dielectric layer; and performing a trimming process on the dielectric layer for the determined trim time to form the spacer.

Advanced process control method for controlling width of spacer and dummy sidewall in semiconductor device

A method for controlling processing temperature in semiconductor fabrication is provided. The method includes detecting temperature in a first chamber configured to process a semiconductor wafer. The method further includes creating a flow of heat-exchange medium in a second chamber which is connected to the first chamber to cool the first chamber. The method also includes controlling the flow of heat-exchange medium according to the temperature detected in the first chamber by changing a covered area of a first ventilation unit which allows the entry of the heat-exchange medium to the second chamber.

Method for controlling processing temperature in semiconductor fabrication

Growing community of inventors

Taichung, Taiwan

Hung-Yin Lin