Merck Patent Gmbh

Other

Clap Co., Ltd.

Hung-Yang Chen

Takanori Kudo

Pascal Hayoz

Jian Yin

Daniel Kaelblein

Jean-Charles Flores

Weihong Liu

Medhat A Toukhy

Iain Mcculloch

Wan Yue

Astrid-Caroline Knall

Nkechinyerem Onwubiko

A resist composition which has as components a phenolic resin component, a photoactive 2,1,5-diazonaphthoquinonesulfonate component (PAC), a solvent component and that does not contain a photo acid generator (PAG). The PAC is a free PAC, a coupled PAC (PACb) or a combination thereof that includes a substituted or unsubstituted 2,1,5-DNQ material or compound onto which a substituted or unsubstituted 2,1,5-DNQ material is appended that, when UV exposed, do not form sulfonic acid. The phenolic resin component is a Novolak derivative in which some or all the free hydroxy groups are protected with an acid cleavable acetal moiety which can include a PACb moiety. A method whereby this composition is used in either thick or thin film photoresist device manufacturing methodologies.

PAG-free positive chemically amplified resist composition and methods of using the same

The present invention relates to resist compositions comprising a polymer component, a photoacid generator component (PAG), a photoactive diazonaphthoquinone component (PAC), a base component, a solvent component, and optionally, a heterocyclic thiol component. The polymer component is a Novolak derivative, comprising Novolak repeat units with free phenolic hydroxy moieties, and Novolak repeat units comprising phenolic hydroxy moieties protected with an acid cleavable acetal moiety. The acetal moiety is elected from a mono functional alkyl acetal moiety protecting a repeat unit comprising a Novolak phenolic hydroxy moiety, an acetal, comprising a moiety functionalized with a PAC moiety, protecting a repeat unit comprising a Novolak phenolic hydroxy moiety; a di-functional acetal comprising moiety, linking and protecting two repeat units comprising Novolak phenolic hydroxy moieties, forming a linking point in said polymer component between two different polymer chains in said polymer component, and a mixture of any of these three types of acid cleavable acetal moieties. The PAC component is selected from said acetal, comprising a moiety functionalized with a PAC moiety, protecting a repeat unit comprising a Novolak phenolic hydroxy moiety, a free PAC component, and a mixture of these two types of PAC components. The present invention also relates to the methods of using the present compositions in either in thick or thin film photoresist device manufacturing methodologies.

Novolak/DNQ based, chemically amplified photoresist

Compounds of formula (I) and polymers comprising at least a structure of formula (II), wherein Tor Tare independently of each other a group of Formula (III), Formula (iv) Q, Q, Q, Q, Qor Qare independently of each other O, S or NR. 

Semiconducting polymer

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Somerset, NJ, United States of America

Hung-Yang Chen