Winbond Electronics Corporation

Hung-Ming Su

Chun-Chiao Tseng

Kazuaki Takesako

Chi-Hung Chan

Provided is a semiconductor structure including a substrate, at least two tested structures, an isolation structure, and a short-circuit detection structure. At least two tested structures are disposed on the substrate. The at least two tested structures include a conductive material. The isolation structure is sandwiched between at least two tested structures. The detection structure includes a detecting layer, and the detecting layer is disposed on one of the at least two tested structures, so that a short circuit defect between the at least two tested structures may be identified in an electron beam detecting process, and the detecting layer includes a conductive material. A manufacturing method of the semiconductor structure and a method for detecting a short circuit of the semiconductor structure are also provided.

Semiconductor structure, manufacturing method thereof and method for detecting short thereof

A layout for measuring an overlapping state includes a layout region, a first dummy active area region, and dummy component regions. The first dummy active area region is located in the layout region. The dummy component regions are stacked in the layout region. At the moment when one of the dummy component regions is formed on the first dummy active area region, the one of the dummy component regions and the first dummy active area region have a first overlapping region, and the first overlapping region does not include other dummy component regions among the dummy component regions.

Growing community of inventors

Taichung, Taiwan

Hung-Ming Su