Taiwan Semiconductor Manufacturing Comp. Ltd.

Hung-Jung Tu

Wen-Chih Chiou

Chen-Hua Douglas Yu

Yu-Liang Lin

Weng-Jin Wu

Shin-Puu Jeng

Ku-Feng Yang

Jing-Cheng Lin

Shang-Yun Hou

Hsien-Pin Hu

Tu-Hao Yu

Tien-I Bao

Hai-Ching Chen

Yung-Chi Lin

Shih-Hui Wang

Ching-Yu Lo

Jung-Chih Hu

Hsien-Wei Chen

Mei-Sheng Zhou

Henry Lo

Sunny Wu

Ching-Ya Wang

Ping Chuang

The present disclosure, in some embodiments, relates to a debonding and cleaning apparatus. The apparatus has a debonding module configured to separate semiconductor substrates from carrier substrates. A first cleaning module is configured to clean surfaces of a first plurality of the semiconductor substrates and a second cleaning module is configured to clean surfaces of a second plurality of the semiconductor substrates. The apparatus also has a first substrate handling module including a first robotic arm in communication with the debonding module and a second substrate handling module including a second robotic arm that is located between the first cleaning module and the second cleaning module. The second substrate handling module is configured to transfer the first plurality of the semiconductor substrates to first cleaning module and to transfer the second plurality of the semiconductor substrates to the second cleaning module.

Wafer debonding and cleaning apparatus

A wafer debonding and cleaning apparatus comprises a wafer debonding module configured to separate a semiconductor wafer from a carrier wafer. The wafer debonding and cleaning apparatus also comprises a first wafer cleaning module configured perform a first cleaning process to clean a surface of the semiconductor wafer. The wafer debonding and cleaning apparatus further comprises an automatic wafer handling module configured to transfer the semiconductor wafer from one of the wafer debonding module or the first wafer cleaning module to the other of the wafer debonding module or the first wafer cleaning module. The semiconductor wafer has a thickness ranging from about 0.20 &#x3bc;m to about 3 mm.

Wafer debonding and cleaning apparatus and method

A method comprising placing a wafer assembly in a wafer cassette, wherein the wafer assembly includes a wafer and an electrostatic carrier attached to the wafer. In addition, the electrostatic carrier is charged through the wafer cassette, the wafer cassette is transported to a next process stage, and the wafer assembly is removed from the wafer cassette.

Method of using a wafer cassette to charge an electrostatic carrier

Packaged semiconductor devices are disclosed. In some embodiments, a packaged semiconductor device includes a substrate and a plurality of integrated circuit dies coupled to the substrate. The device also includes a molding material disposed over the substrate between adjacent ones of the plurality of integrated circuit dies. A cap layer is disposed over the molding material and the plurality of integrated circuit dies, wherein the cap layer comprises an electrically conductive material that directly contacts the molding material and each of the plurality of integrated circuit dies.

Methods of packaging semiconductor devices and packaged semiconductor devices

A wafer cassette includes a main body having space to hold at least one wafer assembly. Each of the at least one wafer assembly includes a wafer and an electrostatic carrier attached to the wafer. An electrical contact structure inside the main body is arranged to contact an electrical pad of the electrostatic carrier.

Wafer cassette with electrostatic carrier charging scheme

Methods of packaging semiconductor devices and packaged semiconductor devices are disclosed. In some embodiments, a method of packaging semiconductor devices includes coupling integrated circuit dies to a substrate, and disposing a molding material around the integrated circuit dies. A cap layer is disposed over the molding material and the plurality of integrated circuit dies.

This description relates to a wafer debonding and cleaning apparatus including an automatic wafer handling module. The automatic wafer handling module loads a semiconductor wafer into a wafer debonding module for a debonding process. The automatic wafer handling module removes the semiconductor wafer from the debonding module and loads the semiconductor wafer into a wafer cleaning module for a cleaning process.

Wafer debonding and cleaning apparatus and method of use

A method includes receiving a carrier with a release layer formed thereon. A first adhesive layer is formed on a wafer. A second adhesive layer is formed over the first adhesive layer or over the release layer. The carrier and the wafer are bonded with the release layer, the first adhesive layer, and the second adhesive layer in between the carrier and the wafer.

Thin wafer handling method

Embodiments of the present disclosure include methods of forming a semiconductor device. An embodiment is a method for forming a semiconductor device, the method including applying a substrate to a carrier with an adhesive layer between the carrier and the substrate, curing a portion of the adhesive layer, the cured portion surrounding an uncured portion of the adhesive layer, removing the carrier from adhesive layer, removing the uncured portion of the adhesive layer, and removing the cured portion of the adhesive layer.

Selective curing method of adhesive on substrate

A method includes providing an interposer wafer including a substrate, and a plurality of through-substrate vias (TSVs) extending from a front surface of the substrate into the substrate. A plurality of dies is bonded onto a front surface of the interposer wafer. After the step of bonding the plurality of dies, a grinding is performed on a backside of the substrate to expose the plurality of TSVs. A plurality of metal bumps is formed on a backside of the interposer wafer and electrically coupled to the plurality of TSVs.

Approach for bonding dies onto interposers

A die includes a seal-ring structure below a substrate. The seal-ring structure is disposed around at least one substrate region. At least one means for substantially preventing ion diffusion into the substrate region. The at least one means is coupled with the seal-ring structure.

Robust TSV structure

A method of forming integrated circuits includes laminating a patterned film including an opening onto a wafer, wherein a bottom die in the wafer is exposed through the opening. A top die is placed into the opening. The top die fits into the opening with substantially no gap between the patterned film and the top die. The top die is then bonded onto the bottom die, followed by curing the patterned film.

Component stacking using pre-formed adhesive films

An integrated circuit structure includes a semiconductor substrate; a through-semiconductor via (TSV) opening extending into the semiconductor substrate; and a TSV liner in the TSV opening. The TSV liner includes a sidewall portion on a sidewall of the TSV opening and a bottom portion at a bottom of the TSV opening. The bottom portion of the TSV liner has a bottom height greater than a middle thickness of the sidewall portion of the TSV liner.

Liner formation in 3DIC structures

A semiconductor structure includes a first die comprising a first substrate and a first bonding pad over the first substrate, a second die having a first surface and a second surface opposite the first surface, wherein the second die is stacked on the first die and a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die.

Growing community of inventors

Hualien, Taiwan

Hung-Jung Tu