Taiwan Semiconductor Manufacturing Comp. Ltd.

Hung-Hsin Liu

How-Cheng Tsai

Yuan-Ko Hwang

Sheng-Liang Pan

Fei-Yun Chen

Tsung-Chi Hsieh

Ming-Kuo Yu

Kuei-Jen Chang

Wei-Ya Wang

Shih-Shun Chen

Kwang-Chen Wu

Shan-Hua Wu

Shih Chiung Chen

Chung-Daw Young

A method for use in manufacturing a microelectromechanical system, such as a reflective stealth mirror includes the steps of: forming an I-shape mirror structure; forming a spacer layer over the I-shape mirror structure; and patterning the spacer layer to form at least one spacer along a side of the I-shape mirror structure.

Spacer fabrication process for manufacturing reflective stealth mirrors and other MEMS devices

The process of the present invention comprises reactive ion etching of AlFOoxide deposits on aluminum-containing bond pads using feed gases, such as, SF/CF/Ar or Cl/BCL/Ar. whose active plasma etches the AlFOoxide deposits by physical etching and chemical etching for more complete removal of the AlFOoxide deposits.

Method to remove fluorine residue from bond pads

A method of forming very small silicon nitride spacers in split-gate flash EPROMs is disclosed which prevent the occurrence of 'write disturb', unwanted reverse tunneling, or erasing. This is accomplished by forming spacers with well-controlled dimensions and well-defined shapes through a judicious use of a fully wet etch technique, including main-etch and over-etch. The use of a phosphoric acid solution in combination with sulfuric acid+hydrogen peroxide widens the process window from a few seconds to several minutes so that the small-dimensioned silicon nitride spacers can be better controlled than it has been possible in the past. In the first embodiment phosphoric solution is used both for main-etch and for over-etch. In the second embodiment, phosphoric solution is used for main-etch only, while the sulfuric+hydrogen peroxide solution is used as an over-etch in forming the tiny silicon nitride spacers of the invention. In the third embodiment, the step of over-etching of the spacers is combined with the step of stripping off of an implant photomask, thus, shortening the manufacturing product cycle.

Method of forming tiny silicon nitride spacer for flash EPROM by fully wet etching technology

A method for a metal etchback process to form a metal filled semiconductor feature having improved planarity and electrical resistance including a semiconductor wafer having an etched opening lined with a refractory metal containing layer and a blanket deposited metal layer filling the etched opening; spin coating a spin on layer selected from the group consisting of an organic resinous layer and a spin-on glass layer over the metal layer; dry etching in a first etchback process to remove a first portion of the SOL layer to reveal a portion of the metal layer leaving a second portion of the SOL layer overlying the etched opening; dry etching in a second etchback process to remove the metal layer to reveal a portion of the refractory metal containing layer; and, removing the second portion of the SOL layer to form a substantially planar metal filled etched opening.

Method for metal etchback with self aligned etching mask

A method of forming very small silicon nitride spacers in split-gate flash EPROMs is disclosed which prevent the occurrence of &ldquo;write disturb&rdquo;, unwanted reverse tunneling, or erasing. This is accomplished by forming spacers with well controlled dimensions and well defined shapes through a judicious combination of dry etch with wet over-etch technique. The wet etch along with the dry etch widens the process window from a few seconds to several minutes so that the small dimensioned silicon nitride spacers can be better controlled than it has been possible in the past. In a second embodiment, the step of over-etching of the spacers is combined with the step of stripping off of an implant photomask, thus, shortening the manufacturing product cycle.

Method of forming tiny silicon nitride spacer for flash EPROM by using dry&plus;wet etching technology

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Hsinchu, Taiwan

Hung-Hsin Liu