Mediatek Corporation

Other

Applied Materials, Inc.

Hung-Chuan Chen

Yi-Jou Lin

Tzy-Tzan Fu

Liang-Gi Yao

Lee Luo

Duen-Yi Ho

Kegang Huang

Shang-Pin Chen

Steven Aihua Chen

Kuan-Ting Lin

Po-hao Chang

Chao-Ming Hung

Po-Hao Chang

Yuh-Min Lin

Shih-Chieh Su

A semiconductor package structure includes a first semiconductor die and a second semiconductor die neighboring the first semiconductor die. The first semiconductor die includes a first edge, a second edge opposite the first edge, and a first metal layer exposed from the second edge. The second semiconductor includes a third edge neighboring the second edge of the first semiconductor die, a fourth edge opposite the third edge, and a second metal layer exposed from the third edge. The first metal layer of the first semiconductor die is electrically connected to the second metal layer of the second semiconductor die.

Semiconductor package structure and method for forming the same

A semiconductor device includes a substrate, a die and multiple conductive traces. The die is mounted on the substrate. The conductive traces are routed on the substrate and connected to the die. The conductive traces at least include a plurality of first conductive traces and a plurality of second conductive traces. The second conductive traces are coupled to a predetermined voltage for providing a shielding pattern. The first conductive traces and the second conductive traces are disposed on the substrate in a substantially interlaced pattern.

Semiconductor devices and methods for enhancing signal integrity of an interface provided by a semiconductor device

The invention provides a method of making a transistor. A gate dielectric layer is formed on a semiconductor substrate. A gate is formed on the dielectric layer, the gate having an exposed upper surface and exposed side surfaces. A first silicon nitride layer having a first thickness is deposited over the gate, for example over an oxide layer on the gate, at a first deposition rate. A second silicon nitride layer having a second thickness is deposited over the first silicon nitride layer at a second deposition rate, the second thickness being more that the first thickness and the second deposition rate being more than the first deposition rate. The first silicon nitrogen layer then has a lower hydrogen concentration. At least the second silicon nitride layer (or a silicon oxide layer in the case of an ONO spacer) is etched to leave spacers next to the side surfaces while exposing the upper surface of the gate and areas of the substrate outside the spacers.

Method of making a transistor, in particular spacers of the transistor

In a method of forming silicon nitride on a substrate, a substrate is provided in a reaction chamber and a nitrogen-containing gas is introduced into the chamber so that a portion of the nitrogen-containing gas is chemically adsorbed on the substrate surface. Thereafter, the reaction chamber is pumped down to remove the nitrogen-containing gas. A silicon-containing gas is introduced into the reaction chamber to react with the adsorbed nitrogen-containing gas to form a silicon nitride layer on the substrate. Thereafter, the silicon-containing gas may be removed and the cycle repeated to deposit additional silicon nitride layers on the substrate.

Method of forming silicon nitride on a substrate

A short period of low power plasma-activated process is imposed after film-forming to remove residual chemical compound. This method includes flowing one or more carrier gases with one or more reaction gases into the chamber, reducing plasma power to react the residual chemical compound with the reaction gases, and pumping to evacuate reaction product from the reaction chamber. The reduced plasma can be achieved by increasing gap spacing at a constant power or gradient power. Alternatively, it can be obtained by keeping the same spacing as the main process with a small power source.

Method of reducing in film particle number in semiconductor manufacture

Growing community of inventors

Hsinchu, Taiwan

Hung-Chuan Chen