Applied Materials, Inc.

Hun Sang Kim

Michael D Willwerth

Jinhan Choi

Byungkook Kong

Shinichi Koseki

Valentin Nikolov Todorow

Shawming Ma

Jie Zhou

Changhun Lee

Chang-Lin Hsieh

Chung Liu

Bryan Liao

Judy Wang

Hoon Sang Lee

Eda Tuncel

Jeong Hyun Yoo

Jinsu Kim

Ho Jeong Kim

Xiaosong Ji

Jun Wan Kim

Wonmo Ahn

Hyungje Woo

Hean Cheal Lee

Embodiments of the present disclosure generally provide an apparatus and methods for processing a substrate. More particularly, embodiments of the present disclosure provide a processing chamber having an enhanced processing efficiency at an edge of a substrate disposed in the processing chamber. In one embodiment, a processing chamber comprises a chamber body defining an interior processing region in a processing chamber, a showerhead assembly disposed in the processing chamber, wherein the showerhead assembly has multiple zones with an aperture density higher at an edge zone than at a center zone of the showerhead assembly, a substrate support assembly disposed in the interior processing region of the processing chamber, and a focus ring disposed on an edge of the substrate support assembly and circumscribing the substrate support assembly, wherein the focus ring has a step having a sidewall height substantially similar to a bottom width.

Processing chamber with substrate edge enhancement processing

A gas flow is described to reduce condensation with a substrate processing chuck. In one example, a workpiece holder in the chamber having a puck to carry the workpiece for fabrication processes, a top plate thermally coupled to the puck, a cooling plate fastened to and thermally coupled to the top plate, the cooling plate having a cooling channel to carry a heat transfer fluid to transfer heat from the cooling plate, a base plate fastened to the cooling plate opposite the puck, and a dry gas inlet of the base plate to supply a dry gas under pressure to a space between the base plate and the cooling plate to drive ambient air from between the base plate and the cooling plate.

Gas flow for condensation reduction with a substrate processing chuck

Embodiments of methods for forming features in a silicon containing layer of a substrate disposed on a substrate support are provided herein. In some embodiments, a method for forming features in a silicon containing layer of a substrate disposed on a substrate support in a processing volume of a process chamber includes: exposing the substrate to a first plasma formed from a first process gas while providing a bias power to the substrate support, wherein the first process gas comprises one or more of a chlorine-containing gas or a bromine containing gas; and exposing the substrate to a second plasma formed from a second process gas while no bias power is provided to the substrate support, wherein the second process gas comprises one or more of an oxygen-containing gas or nitrogen gas, and wherein a source power provided to form the first plasma and the second plasma is continuously provided.

Method for forming features in a silicon containing layer

Methods of patterning a blanket layer (a target etch layer) on a substrate are described. The methods involve multiple patterning steps of a mask layer several layers above the target etch layer. The compound pattern, made from multiple patterning steps, is later transferred in one set of operations through the stack to save process steps.

Simplified litho-etch-litho-etch process

In one embodiment, a method is proposed for etching a boron dope hardmask layer. The method includes flowing a process gas comprising at least CHinto a processing chamber. Forming a plasma in the process chamber from the process gas and etching the boron doped hardmask layer in the presence of the plasma. In other embodiments, the process gas utilized to etch the boron doped hardmask layer includes CH, Cl, SFand O.

Method of etching a boron doped carbon hardmask

A selective self-aligned dual patterning method. The method includes performing a single lithography operation to form a patterned mask having a narrow feature in a region of a substrate that is to a have pitch-reduced feature and a wide feature in a region of the substrate that is to have a non-pitch-reduced feature. Using the patterned mask, a template mask is formed with a first etch and the patterned mask is then removed from the narrow feature while being retained over the wide feature. The template mask is then thinned with a second etch to introduce a thickness delta in the template mask between the narrow and wide features. A spacer mask is then formed and the thinned narrow template mask is removed to leave a pitch double spacer mask while the thick wide template mask feature is retained to leave a non-pitch reduced mask.

Selective self-aligned double patterning of regions in an integrated circuit device

Etching of carbonaceous layers with an etchant gas mixture including molecular oxygen (O) and a gas including a carbon sulfur terminal ligand. A high RF frequency source is employed in certain embodiments to achieve a high etch rate with high selectivity to inorganic dielectric layers. In certain embodiments, the etchant gas mixture includes only the two components, COS and O, but in other embodiments additional gases, such as at least one of molecular nitrogen (N), carbon monoxide (CO) or carbon dioxide (CO) may be further employed to etch to carbonaceous layers.

Plasma etching carbonaceous layers with sulfur-based etchants

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San Ramon, CA, United States of America

Hun Sang Kim