Applied Materials, Inc.

Winbond Electronics Corporation

Ebay, Incorporated

Other

Sipix Imaging, Inc.

Appleid Materials, Inc

Hui W Chen

Shou-Sung Chang

Chih Chung Chou

Hung Chih Chen

Jianshe Tang

Haosheng Wu

Hari N Soundararajan

Oron Michael

Robin John Jigour

Jim Kellogg Atkinson

Yan Ye

Paul D Butterfield

Jie Yuan

Eric Lau

Alexander John Fisher

Garrett Ho Yee Sin

Haochuan Zhang

Joseph Yudovsky

Avi Tepman

Jeonghoon Oh

Hong Shih

Brian J Brown

Xikun Wang

Dan A Marohl

Sen-Hou Ko

Charles C Garretson

Steve G Ghanayem

Ming-Huei Shieh

Allen L D'Ambra

Roy Leon Camp

Edwin C Suarez

Gary C Ettinger

Alexander S Polyak

Chang-Lin Hsieh

Younes Achkire

King Yi Heung

Frederik Van Voorden

Kirk Allen Fisher

Yufei Chen

Yen Lin Leow

Clinton P Sakata

Toshikazu Tomita

Noel Manto

Xinning Luan

Kenneth Reese Reynolds

Gireesh Sreepathi

Chang Lin Hsieh

Shawn Thomas

Krishna Chandra Shekar

Steven M Zuniga

Christopher Dennis Bencher

Wai-Fan Yau

Peter K Loewenhardt

Hongmei Zang

Chun Yan

Benjamin Cherian

Diana Xiaobing Ma

Huixiong Dai

Fei C Wang

Tien-Ler Lin

Simon Yavelberg

Lakshmanan Karuppiah

Tomohiko Kitajima

Yajuan Chen

Eungjoon Park

Jack Hou

Raymond Hoiman Hung

Mario Dave Silvetti

Yi-Shung Chaug

Theodoros Panagopoulos

David J Lischka

Kangtai Ren

Michael Duane

Surajit Kumar

Alpay Yilmaz

Yongmei Chen

David Datong Huo

Jen Shu

Wanheng Wang

John M Yamartino

Gerald John Alonzo

Dan Zhang

Hoiman Raymond Hung

Jing-Den Chen

Steve S Y Mak

Teng Su

Sum-Yee Betty Tang

Chorng-Ping Chang

Anbei Jiang

Sheshraj L Tulshibagwale

Christopher Siu Wing Ngai

Susie Xiuru Yang

Takashi Fujikawa

Chia-Pu Chang

Adrian Blank

Wei-Cheng Lee

Xumou Xu

Kenneth MacWilliams

Kwangho Kim

Quan Gu

Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.

Methods of forming silicon carbide coated base substrates at multiple temperatures

Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800&#xb0; C. to less than 1,000&#xb0; C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000&#xb0; C. to about 1,400&#xb0; C. to form a second silicon carbide layer on the first silicon carbide layer.

A chemical mechanical polishing apparatus includes a rotatable platen to hold a polishing pad, a rotatable carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a polishing liquid supply port to supply a polishing liquid to the polishing surface, a thermal control system including a movable nozzle to spray a medium onto the polishing surface to adjust a temperature of a zone on the polishing surface, an actuator to move the nozzle radially relative to an axis of rotation of the platen, and a controller configured to coordinate dispensing of the medium from the nozzle with motion of the nozzle across the polishing surface.

Temperature-based assymetry correction during CMP and nozzle for media dispensing

A method of temperature control for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto the component in the polishing system while the component is spaced away from a polishing pad of the polishing system to raise a temperature of the component to an elevated temperature, and before the component returns to an ambient temperature, moving the component into contact with the polishing pad.

Use of steam for pre-heating of CMP components

A method of cleaning for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto a component in the polishing system while the component is spaced away from a polishing pad of the polishing system to clean the component, and moving the component into contact with the polishing pad.

Steam cleaning of CMP components

A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, and a pad cooling assembly. The pad cooling assembly has an arm extending over the platen, a nozzle suspended by the arm and coupled to a source of coolant fluid, the nozzle positioned to spray coolant fluid from the source onto the polishing surface of the polishing pad, and an opening in the arm adjacent the nozzle and a passage extending in the arm from the opening, the opening positioned sufficiently close to the nozzle that a flow of coolant fluid from the nozzle entrains air from the opening.

Gas entrainment during jetting of fluid for temperature control in chemical mechanical polishing

An apparatus for steam treatment of a carrier head or a substrate in a chemical mechanical polishing system includes a load cup, a pedestal in a cavity defined by the load cup, the pedestal configured to receive a substrate from or supply a substrate to a carrier head, a boiler to generate steam, one or more nozzles positioned to direct steam inwardly into the cavity defined by the load cup, and a supply line running from the boiler to the one or more nozzles to supply steam to the one or more nozzles.

Steam treatment stations for chemical mechanical polishing system

Systems and methods for centralized client application management are provided. In an example embodiment, device data is received from a user device. The user device is identified according to an identification rule. A client state is received from the user device. A match between the client state and a specified state is determined. Based on the client state matching the specified state, an instruction to be performed on the user device is generated. The instruction is caused to be performed on the user device. The instruction causes a change to the client state stored on the user device.

Centralized client application management

A polishing module includes a chuck having a substrate receiving surface and a perimeter, and one or more polishing pad assemblies positioned about the perimeter of the chuck, wherein each of the one or more polishing pad assemblies are coupled to an actuator that provides movement of the respective polishing pad assemblies in a sweep direction, a radial direction, and a oscillating mode relative to the substrate receiving surface and are limited in radial movement to about less than one-half of the radius of the chuck as measured from the perimeter of the chuck.

Polishing system with local area rate control and oscillation mode

A polishing module including a chuck having a substrate receiving surface and a perimeter, and one or more polishing pad assemblies positioned about the perimeter of the chuck, wherein each of the one or more polishing pad assemblies are coupled to an actuator that provides movement of the respective polishing pad assemblies in one or more of a sweep direction, a radial direction, and a oscillating mode relative to the substrate receiving surface and are limited in radial movement to about less than one-half of the radius of the chuck as measured from the perimeter of the chuck.

Local area polishing system and polishing pad assemblies for a polishing system

In some embodiments, an apparatus for cleaning a substrate is provided that includes (1) a substrate chuck configured to support a substrate with a front side of the substrate accessible; (2) a buff pad assembly configured to support a buff pad having a diameter smaller than a diameter of the substrate; and (3) a swing arm coupled to the buff pad and configured to position and rotate the buff pad along the front side of the substrate, and control an amount of force applied by the buff pad against the front side of the substrate during cleaning. The substrate chuck, buff pad assembly and swing arm are configured to buff clean the substrate. Numerous additional aspects are disclosed.

Systems, methods and apparatus for post-chemical mechanical planarization substrate buff pre-cleaning

A buff module and method for using the same are provided. In one embodiment, a buff module includes housing having an interior volume, a plurality of drive rollers and a pair of buff heads. The drive rollers are arranged to rotate a substrate within the interior volume on a substantially horizontal axis. The buff heads are disposed in the housing, each buff head rotatable on an axis substantially aligned with the horizontal axis and movable to a position substantially parallel with the horizontal axis.

Double sided buff module for post CMP cleaning

Serial NAND flash memory may be provided with the characteristics of continuous read of the memory across page boundaries and from logically contiguous memory locations without wait intervals, while also being clock-compatible with the high performance serial flash NOR ('HPSF-NOR') memory read commands so that the serial NAND flash memory may be used with controllers designed for HPSF-NOR memory. Serial NAND flash memory having these compatibilities is referred to herein as high-performance serial flash NAND ('SPSF-NAND') memory. Since devices and systems which use HPSF-NOR memories and controllers often have extreme space limitations, HPSF-NAND may also be provided with the same physical attributes of low pin count and small package size of HPSF-NOR memory for further compatibility. HPSF-NAND memory is particularly suitable for code shadow applications, even while enjoying the low &#x201c;cost per bit&#x201d; and low per bit power consumption of a NAND memory array at higher densities.

NAND flash memory

A chemical mechanical polishing system includes a substrate support configured to hold a substrate during a polishing operation, a polishing pad assembly include a membrane and a polishing pad portion, a polishing pad carrier, and a drive system configured to cause relative motion between the substrate support and the polishing pad carrier. The polishing pad carrier includes a casing having a cavity and an aperture connecting the cavity to an exterior of the casing. The polishing pad assembly is positioned in the casing such that the membrane divides the cavity into a first chamber and a second chamber and the aperture extends from the second chamber. The polishing pad carrier and polishing pad assembly are positioned and configured such that at least during application of a sufficient pressure to the first chamber the polishing pad portion projects through the aperture.

Carrier for small pad for chemical mechanical polishing

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San Jose, CA, United States of America

Hui W Chen