Advanced Semiconductor Engineering, Inc.

Hui Hua Lee

Chi-Tsung Chiu

Hui-Ying Hsieh

Kuo-Hua Chen

Chun Hao Chiu

Cheng-Hung Ko

Meng-Jen Wang

Kay Stefan Essig

Cheng Yuan Chen

Cheng-Hsi Chuang

A semiconductor device package includes a first conductive base, a first insulation layer and a second insulation layer. The first conductive base has a first surface, a second surface opposite to the first surface and a lateral surface extended between the first surface and the second surface. The lateral surface includes a first portion adjacent to the first surface and a second portion adjacent to the second surface. The first insulation layer comprises a first insulation material. The first insulation layer has a first surface and a second surface opposite to the first surface. The first insulation layer covers the first portion of the lateral surface of the first conductive base. The second insulation layer comprises a second insulation material and covers the second portion of the lateral surface of the first conductive base. The first insulation material is different from the second insulation material.

Semiconductor device package

A semiconductor package structure includes a base material, at least one semiconductor chip, an encapsulant, a depression structure, a redistribution layer and at least one conductive via. The semiconductor chip is disposed on the base material. The encapsulant is disposed on the base material and covers the at least one semiconductor chip. The encapsulant has an outer side surface. The depression structure is disposed adjacent to and exposed from of the outer side surface the encapsulant. The redistribution layer is disposed on the encapsulant. The conductive via is disposed in the encapsulant and electrically connects the semiconductor chip and the redistribution layer.

Semiconductor package structure and method for manufacturing the same

A semiconductor device package includes a metal carrier, a passive device, a conductive adhesive material, a dielectric layer and a conductive via. The metal carrier has a first conductive pad and a second conductive pad spaced apart from the first conductive pad. The first conductive pad and the second conductive pad define a space therebetween. The passive device is disposed on top surfaces of first conductive pad and the second conductive pad. The conductive adhesive material electrically connects a first conductive contact and a second conductive contact of the passive device to the first conductive pad and the second conductive pad respectively. The dielectric layer covers the metal carrier and the passive device and exposes a bottom surface of the first conductive pad and the second conductive pad. The conductive via extends within the dielectric layer and is electrically connected to the first conductive pad and/or the second conductive pad.

Semiconductor device package and method of manufacturing the same

A semiconductor device package includes a conductive base, and a cavity defined from a first surface of the conductive base, the cavity having a bottom surface and a depth. A semiconductor die is disposed on the bottom surface of the cavity, the semiconductor die having a first surface and a second surface opposite the first surface. The second surface of the semiconductor die is bonded to the bottom surface of the cavity. A distance between the first surface of the semiconductor die and the first surface of the conductive base is about 20% of the depth of the cavity.

A semiconductor device package includes a first conductive base, a first semiconductor die, a dielectric layer, a first patterned conductive layer, and a second patterned conductive layer. The first conductive base defines a first cavity. The first semiconductor die is on a bottom surface of the first cavity. The dielectric layer covers the first semiconductor die, the first surface and the second surface of the first conductive base and fills the first cavity. The first patterned conductive layer is on a first surface of the dielectric layer. The second patterned conductive layer is on a second surface of the dielectric layer.

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Kaohsiung, Taiwan

Hui Hua Lee