Taiwan Semiconductor Manufacturing Comp. Ltd.

Hui-Chi Lin

Ying-Lang Wang

Szu-An Wu

Yi-Lung Cheng

Cheng-Yeh Shih

Chie-Ming Yang

Jun-Yang Lai

Jiann-Liang Liou

A semiconductor processing apparatus and method are disclosed herein, including a plurality of process chambers, wherein at least one semiconductor processing operation occurs within each process chamber among the plurality of process chambers. Additionally, the apparatus and method disclosed herein include a robot mechanism for rotating each process chamber among the plurality of process chambers upon completion of an associated semiconductor processing operation. Such a robot mechanism may comprise a plurality of robots. Specifically, such a plurality of robots may include six robots configured on an associated carousel.

Semiconductor chamber process apparatus and method

A new method is provided for treating the surface of a layer of passivation where this layer of passivation comprises silicon dioxide or silicon nitride. An oxygen rich layer is created over the surface of the layer of passivation. Under the first embodiment of the invention a layer of silicon oxide is deposited over the surface of a substrate, a layer of plasma enhanced silicon nitride is deposited over the surface of the layer of silicon oxide, and a layer of oxynitride is deposited over the surface of the layer of plasma enhanced silicon nitride. Under the second embodiment of the invention a layer of silicon oxide is deposited over the surface of a substrate, a layer of silicon nitride is deposited over the surface of layer of silicon oxide. The surface of the layer of silicon nitride is oxidized by N O or O plasma treatment.

Method to improve adhesion of molding compound by providing an oxygen rich film over the top surface of a passivation layer

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Hsinchu, Taiwan

Hui-Chi Lin