Taiwan Semiconductor Manufacturing Comp. Ltd.

Hui-Chi Huang

Kei-Wei Chen

Chun-Hao Kung

Chih-Chieh Chang

Kao-Feng Liao

Tung-Kai Chen

Yen-Ting Chen

Ching-Hsiang Tsai

Shang-Yu Wang

Fang-I Chih

Hsin-Ying Ho

Chien-Ping Lee

Chia-Jung Hsu

Chi-Ming Tsai

Peng-Chung Jangjian

Wan-Chun Pan

Yu-Ting Yen

Chu-An Lee

Pin-Chuan Su

Jeng-Chi Lin

Chien-Ming Wang

Zink Wei

Huicheng Chang

Yung-Cheng Lu

Huan-Just Lin

Liang-Yin Chen

Su-Hao Liu

Chih-Hung Chen

Kuo-Ju Chen

Kuei Shun Chen

Chia-Chu Liu

Lun-Kuang Tan

Li-Chieh Wu

Wei-Ming You

Gin-Chen Huang

Mu-Chi Chiang

Che-Hao Tu

Hsiao-Tzu Lu

I-Shuo Liu

Bi-Fen Wu

Chih-Wen Liu

Shu-Wei Hsu

Jung-Tsan Tsai

Jie-Huang Huang

Yao-Kwang Wu

Yeo-Sin Lin

A tool and methods of removing films from bevel regions of wafers are disclosed. The bevel film removal tool includes an inner motor nested within an outer motor and a bevel brush secured to the outer motor. The bevel brush is adjustable radially outward to allow the wafer to be inserted in the bevel brush and to be secured to the inner motor. The bevel brush is adjustable radially inward to engage one or more sections of the bevel brush and to bring the bevel brush in contact with a bevel region of the wafer. Once engaged, a solution may be dispensed at the engaged sections of the bevel brush and the inner motor and the outer motor may be rotated such that the bevel brush is rotated against the wafer such that the bevel films of the wafer are both chemically and mechanically removed.

Bevel edge removal methods, tools, and systems

Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio being determined based on an electro potential (Ev) value of a metal material of the substrate. The CMP process may be performed on the substrate based on the balanced concentration ratio of chelator additives to inhibitor additives of the CMP slurry.

Chemical mechanical polish slurry and method of manufacture

A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.

Semiconductor device structure with an interconnect structure in a dielectric layer with multiple hydrophobic layers along sidewalls of the dielectric layer, and method for forming the same

A method comprising: providing a slurry to a polishing pad that is disposed on a wafer platen, the slurry comprising a plurality of electrically charged abrasive particles having a first electrical polarity; moving a first side of a wafer into contact with the slurry and the polishing pad; applying a first electrical charge having a second electrical polarity, opposite the first electrical polarity, to a first conductive rod; moving the first side of the wafer away from the polishing pad while the first electrical charge is applied to the first conductive rod; moving a first wafer brush into contact with the first side of the wafer; applying a second electrical charge having the second electrical polarity, opposite the first electrical polarity, to a second conductive rod arranged within the first wafer brush; and moving the first wafer brush away from the first side of the wafer.

Electrical cleaning tool for wafer polishing tool system

Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.

Self-healing polishing pad

A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.

Mega-sonic vibration assisted chemical mechanical planarization

A method of operating a chemical mechanical planarization (CMP) tool includes attaching a polishing pad to a first surface of a platen of the CMP tool using a glue; removing the polishing pad from the platen, wherein after removing the polishing pad, residue portions of the glue remain on the first surface of the platen; identifying locations of the residue portions of the glue on the first surface of the platen using a fluorescent material; and removing the residue portions of the glue from the first surface of the platen.

Chemical mechanical planarization tool

A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.

Chemical mechanical polishing apparatus and method

A chemical-mechanical polishing (CMP) system includes a head, a polishing pad, and a magnetic system. The slurry used in the CMP process contains magnetizable abrasives. Application and control of a magnetic field, by the magnetic system, allows precise control over how the magnetizable abrasives in the slurry may be drawn toward the wafer or toward the polishing pad.

Magnetic slurry for highly efficiency CMP

Provided herein are chemical-mechanical planarization (CMP) systems and methods to reduce metal particle pollution on dressing disks and polishing pads. Such methods may include contacting a dressing disk and at least one conductive element with an electrolyte solution and applying direct current (DC) power to the dressing disk and the at least one conductive element.

Methods to clean chemical mechanical polishing systems

Semiconductor device structure with interconnect structure and method for forming the same

Growing community of inventors

Zhubei, Taiwan

Hui-Chi Huang