United Microelectronics Corp.

Hua-Wei Peng

Wen-Chieh Wang

Jy-Hwang Lin

Tien-Shang Kuo

Huan-Hsin Yeh

Hsin-Hsu Lin

Kuo Feng Huang

Ming Hsien Chung

Fu-Hsuan Chu

Ming-Tso Chen

Chao-Chi Lu

Kuo-Tsai Lo

Kao-Hua Wu

Chia-He Cheng

Chih Chung Kuo

Ming-Che Lai

Zhi Fan Sun

A lithography system includes an immersion lithographic apparatus, a fluid supply device, and a sensor. The fluid supply is configured to supply fluid to the immersion lithographic apparatus. The fluid supply device includes at least one liquid storage tank, an upper liquid pipe and a lower liquid pipe connected to the liquid storage tank. The sensor includes at least one hydraulic pressure gauge. The at least one hydraulic pressure gauge is arranged near a lower part of the liquid storage tank and connected to the lower liquid pipe and the upper liquid pipe so as to measure the hydraulic pressure at a bottom of the liquid storage tank. The height of the liquid level in the liquid storage tank is calculated from the hydraulic pressure.

Lithography system and method of detecting fluid leakage in liquid storage tank of the same

A substrate processing apparatus includes a process station for processing a substrate; a cassette station integrated with the process station; a substrate carriage equipped for transferring the substrate between said process station and the cassette station through a passage located at an interface between the process station and said cassette station; and a substrate scanner equipped at said interface between the process station and the cassette station for capturing surface image data during transportation of the substrate that passes through the passage.

Substrate processing apparatus equipped with substrate scanner

A semiconductor structure includes a substrate, a plurality of image sensing devices formed in the substrate, at least a passivation layer formed on the substrate, a plurality of first metal patterns formed on the passivation layer, a plurality of gaps formed between the first metal patterns, an insulating layer lining the gaps, and a plurality of light-guiding structures respectively formed in the gaps. The light-guiding structures respectively include an anchor portion and a body portion, and bottom surfaces of the anchor portions being lower than top surfaces of the first metal patterns.

Semiconductor structure

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Hsinchu, Taiwan

Hua-Wei Peng