Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsueh-Li Sun

Jih-Churng Twu

Hung-Ta Huang

Stanley Huang

Jie-Shing Wu

Tom Tseng

Juinn-Jie Chang

A method of monitoring and adjusting the position of a wafer with respect to an ion beam including setting the position of a wafer holder so that a wafer to be held therein is positioned at a tilt angle of 45 degrees and a twist angle of 45 degrees with respect to the path of an ion beam; positioning a n-type wafer without screen oxide in the wafer holder; implanting boron species into a region of the wafer at 160 KeV and a dose level of 5.0&#xd7;10atoms/cm; periodically measuring the sheet resistivity of a implanted wafer and readjusting the wafer tilt angle when the sheet resistivity is greater than 30 ohms/square.

Method of monitoring high tilt angle of medium current implant

Within a method for forming a microelectronic fabrication, there is ion implanted into a corner of a topographic feature within a microelectronic substrate a dose of an implanting ion such as to effect rounding of the corner of the topographic feature when thermally oxidizing the microelectronic substrate. The dose of the implanting ion is implanted while employing a laterally etched mask layer as an ion implantation mask layer which exposes the corner. The dose of the implanting ion is selected from the group consisting of silicon containing ions, germanium containing ions, arsenic containing ions, phosphorus containing ions and boron containing ions, such to provide for rounding of the corner with enhanced process efficiency.

Ion implant method for topographic feature corner rounding

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Youkan, Taiwan

Hsueh-Li Sun