Taiwan Semiconductor Manufacturing Comp. Ltd.

Walsin Lihwa Corporation

Tsinghua University

Hsueh-An Yang

Weileun Fang

Hung-Yi Lin

Mingching Wu

Chun-Wen Cheng

Chia-Hua Chu

Kuei-Sung Chang

Chung-Hsien Lin

Yi Heng Tsai

Kai-Chih Liang

Li-Cheng Chu

Chia-Pao Shu

Tsung-Lin Tang

Migching Wu

A semiconductor device package includes a first substrate, which has a lower substrate surface and an upper substrate surface. A conductive dummy gate structure is disposed over the upper substrate surface. An interconnect structure is disposed over the conductive dummy gate structure. The interconnect structure includes a plurality of metal layers disposed within a dielectric structure and at least one of the metal layers is electrically coupled to the conductive dummy gate structure. A conductive through-substrate via extends from the lower substrate surface to an underside of the conductive dummy gate structure and is electrically coupled to the conductive dummy gate structure.

Method of making a semiconductor device package with dummy gate

A method of forming a semiconductor device package includes bonding a front surface of a first substrate to a second substrate, and thinning a back surface of the first substrate. The method includes depositing and patterning a dielectric layer on the thinned back surface of the first substrate, and etching the first substrate after the depositing and the patterning of the dielectric layer are performed to form a through silicon via to enable electrical connection with a first level metal of the first substrate. The method includes depositing an isolation layer to line the through silicon via is formed, and etching the isolation layer at the bottom of the through silicon via. The method includes depositing a conductive layer to line the through silicon via after the isolation layer at the bottom of the through silicon via is etched, and deposited a copper film over the conductive layer.

Method of making a semiconductor device package

One method includes providing a first substrate; the first substrate may include a first MEMS device and a second MEMS device. A second substrate is also provided. The first substrate is bonded to the second substrate. The bonding may include forming a first bond ring around the first MEMS device and forming a second bond ring around the second MEMS device, wherein the second bond ring also encircles the first bond ring. In an embodiment, the eutectic point of the materials of the second bond ring is not reached during the bonding.

Method of forming a bond ring for a first and second substrate

The embodiments of methods and structures for forming through silicon vias a CMOS substrate bonded to a MEMS substrate and a capping substrate provide mechanisms for integrating CMOS and MEMS devices that use less real-estate and are more reliable. The through silicon vias electrically connect to metal-1 level of the CMOS devices. Copper metal may be plated on a barrier/Cu-seed layer to partially fill the through silicon vias, which saves time and cost. The formation method may involve using dual dielectric layers on the substrate surface as etching mask to eliminate a photolithographical process during the removal of oxide layer at the bottoms of through silicon vias. In some embodiments, the through silicon vias land on polysilicon gate structures to prevent notch formation during etching of the vias.

Wafer level packaging of micro-electro-mechanical systems (MEMS) and complementary metal-oxide-semiconductor (CMOS) substrates

The present disclosure provides a device having a plurality of bonded substrates. The substrates are bonded by a first bond ring and a second bond ring. In an embodiment, the first bond ring is a eutectic bond and the second bond ring is at least one of an organic material and a eutectic bond. The second bond ring encircles the first bond ring. The first bond ring provides a hermetic region of the device. In a further embodiment, a plurality of wafers are bonded which include a third bond ring disposed at the periphery of the wafers.

Bond ring for a first and second substrate

The present disclosure provides a micro-electro-mechanical systems (MEMS) device and a method for fabricating such a device. In an embodiment, a MEMS device includes a substrate, a dielectric layer above the substrate, an etch stop layer above the dielectric layer, and two anchor plugs above the dielectric layer, the two anchor plugs each contacting the etch stop layer or a top metal layer disposed above the dielectric layer. The device further comprises a MEMS structure layer disposed above a cavity formed between the two anchor plugs and above the etch stop layer from release of a sacrificial layer.

MEMS device etch stop

A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.

Integration manufacturing process for MEMS device

A magnetic element and its manufacturing method are provided. A magnetic element includes an actuation part having a first surface and a second surface, a torsion bar connected to the actuation part, and a frame connected to the first torsion bar, wherein the first surface of the actuation part is an uneven surface. The manufacturing method of the magnetic element starts with forming an passivation layer on a substrate and defining a special area by the mask method, then continues with forming the adhesion layer and electroplate-initializing layer on the substrate sequentially. The photoresist layer are formed and the magnetic-inductive material is electroformed on the electroplate area. Finally, the substrate is etched and the passivation layer is removed to obtain the magnetic element. The manufacturing method of magnetic element of the present invention can be applied in the microelectromechanical system field and other categories.

Magnetic element and manufacturing method therefor

A two-axis device is provided. The two-axis device includes a first substrate having a plurality of electrodes, a first connecting layer located on the first substrate, an actuating layer, a second connecting layer and a cover. The actuating layer is connected to the first substrate via the first connecting layer and includes a circular portion, an actuating portion, a first shaft and a second shaft. The second connecting layer is connected to the actuating layer and the cover is connected to the actuating layer via the second connecting layer. In addition, a vacuum concavity is formed by the first substrate, the first connecting layer, the actuating layer, the second connecting layer and the cover. The actuating portion and the first shaft are located in the vacuum concavity, and the second shaft extends outside of the vacuum concavity.

Growing community of inventors

Taipei, Taiwan

Hsueh-An Yang