Mosel Vitelic Corporation

Hsiu-Fang Lo

Yu-Hsuan Chang

A diode structure and a manufacturing method are disclosed. The diode structure includes a semiconductor substrate, a first semiconductor layer, a second semiconductor layer and an epitaxy layer. The semiconductor substrate includes a first surface. The first semiconductor layer and the second semiconductor layer are extended toward the interior of the semiconductor substrate from the first surface by implanting a dopant. Both of the semiconductor types of the first semiconductor layer and the second semiconductor layer are opposite to the semiconductor type of the semiconductor substrate. The epitaxy layer is formed on the first surface, connected with the first semiconductor layer and the second semiconductor layer and extended outwardly from the first surface. The first semiconductor layer and the second semiconductor layer are connected with each other, continuously. The concentration distribution of the dopant within the first semiconductor layer and the second semiconductor layer is in a discontinuous curve.

Diode structure and manufacturing method thereof

A transient-voltage-suppression diode structure and a manufacturing method thereof are disclosed. The structure includes a substrate, an N&#x2212; type epitaxial layer, a first metal layer, a first N+ type implant layer, a deep N+ type implant layer and plural polycrystalline plugs. The N&#x2212; type epitaxial layer is disposed on the substrate. The first metal layer is disposed on the N&#x2212; type epitaxial layer to form a working-voltage terminal. The first N+ type implant layer spatially corresponding to the working-voltage terminal and embedded in the N&#x2212; type epitaxial layer is connected with the working-voltage terminal. The deep N+ type implant layer spatially corresponding to the working-voltage terminal and embedded in the N&#x2212; type epitaxial layer is spaced apart from the first N+ type implant layer at a separation distance. The plural polycrystalline plugs are connected between the working-voltage terminal of the first metal layer and the deep N+ type implant layer.

Growing community of inventors

Hsinchu, Taiwan

Hsiu-Fang Lo