United Microelectronics Corp.

United Microelectric Corp.

Hsiu-Chuan Chu

Teng-Chun Tsai

Neng-Kuo Chen

Chih-An Huang

Hsiao-Ling Lu

A silicon oxide gap-filling process is described, wherein a CVD process having an etching effect is performed to fill up a trench with silicon oxide. The reaction gases used in the CVD process include deposition gases and He/Hmixed gas as a sputtering-etching gas, wherein the percentage of the He/Hmixed gas in the total reaction gases is raised with the increase of the aspect ratio of the trench.

Silicon oxide gap-filling process

A method of fabricating a shallow trench isolation structure is disclosed. On a substrate, a pad oxide layer and a mask layer are successively formed. The pad oxide layer, the mask layer and a portion of the substrate are patterned to form a trench. After performing a rapid wet thermal process, a liner layer is formed on the exposed surface of the substrate, including the exposed silicon surface of the substrate in the trench and sidewalls and the surface of the mask layer. An oxide layer is deposited over the trench and the substrate and fills the trench. A planarization process is performed until the mask layer is exposed. The mask layer and the pad oxide layer are removed to complete the shallow trench isolation structure.

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Hsinchu, Taiwan

Hsiu-Chuan Chu