Taiwan Semiconductor Manufacturing Comp. Ltd.

TSMC Solid State Lighting Ltd.

Epistar Corporation

Hsing-Kuo Hsia

Chen-Hua Douglas Yu

Shang-Yun Hou

Kuo-Chiang Ting

Chih-Kuang Yu

Chuei-Tang Wang

Chi-Hsi Wu

Hung-Yi Kuo

Sung-Hui Huang

Ching-Hua Chiu

Chih-Chieh Chang

Chyi Shyuan Chern

Jiun Yi Wu

Kuan-Yu Huang

Jeng-Shien Hsieh

Yu-Kuang Liao

Hung-Wen Huang

Chung-Hao Tsai

Hao-Chung Kuo

Zhen-Yu Li

Gordon Kuo

Chewn-Pu Jou

Ying-Ching Shih

Hsien-Pin Hu

Chin-Fu Kao

Li-Chung Kuo

Wen-Hsin Wei

Chih-Yuan Chang

Heh-Chang Huang

Yushun Lin

Jung-Tang Chu

Chih-Chieh Hung

Der-Chyang Yeh

Feng-Wei Kuo

Chun-Lin Louis Chang

Hsi-Kuei Cheng

Chih-Ping Chao

Hsin-Hsien Wu

Pin-Tso Lin

Chin-Hao Su

Hao-Hsun Lin

Chung-Pao Lin

Wen-Chien Fu

Yea-Chen Lee

Szu-Wei Lu

Hsin-Chieh Huang

Tsung-Fu Tsai

Ching-Hui Chen

Cheng-Tse Tang

Wei-Heng Lin

Jacob C Tarn

Ming-Hua Lo

Hon-Way Lin

Chih-Wei Tseng

Ming Yang Chung

Tien-Lin Shen

Chih-Chia Lin

Cindy Huichun Shu

Troy Wu

Hung-Weng Huang

Chyi Shyuan Chem

Hua-Kung Chiu

Jia-Hong Wu

Jui Lin Chao

Ming Lee

A method includes forming a first photonic die, which includes forming a first silicon waveguide, and forming a first nitride waveguide. The method further includes forming a first through-via extending into a first plurality of dielectric layers in the first photonic die, and bonding a second photonic die to the first photonic die. The second photonic die includes a second nitride waveguide. The first silicon waveguide is optically coupled to the second nitride waveguide through the first nitride waveguide. A second through-via extends into a second plurality of dielectric layers in the second photonic die.

Integrated 3DIC with stacked photonic dies and method forming same

An embodiment photonic device may include a first terminal including silicon and a second terminal including polysilicon. The first terminal may be configured as a first three-dimensional structure extending along a first direction and having a first U-shaped portion in a first cross-sectional plane perpendicular to the first direction. Similarly, the second terminal may be configured as a second three-dimensional structure extending along the first direction and having a second U-shaped portion in the first cross-sectional plane. The photonic device may further include a capacitor dielectric layer disposed between the first terminal and the second terminal and a cladding dielectric layer surrounding the first terminal and the second terminal. The first U-shaped portion and the second U-shaped portion may be arranged in an interlocking configuration having an overlapping region that is configured as an optical transmission line in which the first direction is an optical propagation direction.

Photonic semiconductor-insulator-semiconductor modulator and methods for forming the same

A device includes a photonic routing structure including a silicon waveguide, photonic devices, and a grating coupler, wherein the silicon waveguide is optically coupled to the photonic devices and to the grating coupler; an interconnect structure on the photonic routing structure, wherein the grating coupler is configured to optically couple to an external optical fiber disposed over the interconnect structure; and computing sites on the interconnect structure, wherein each computing site includes an electronic die bonded to the interconnect structure, wherein each electronic die of the computing sites is electrically connected to a corresponding photonic device of the photonic devices.

Photonic semiconductor device and method of manufacture

A package includes silicon waveguides on a first side of an oxide layer; photonic devices on the first side of the oxide layer, wherein the photonic devices are coupled to the silicon waveguides; redistribution structures over the first side of the oxide layer, wherein the redistribution structures are electrically connected to the photonic devices; a hybrid interconnect structure on a second side of the oxide layer, wherein the hybrid interconnect structure includes a stack of silicon nitride waveguides that are separated by dielectric layers; and through vias extending through the hybrid interconnect structure and the oxide layer, wherein the through vias make physical and electrical connection to the redistribution structures.

Photonic package and method of manufacture

A method includes bonding a photonic engine onto an interposer, and bonding a package component onto the interposer. The package component includes a device die. The method further includes encapsulating the package component and the photonic engine in an encapsulant, attaching a thermal-electronic cooler to the photonic engine, and attaching a metal lid to the package component.

Thermo-electric cooler for dissipating heat of optical engine

Semiconductor devices and methods of forming the semiconductor devices are described herein. A method includes providing a first material layer between a second material layer and a semiconductor substrate and forming a first waveguide in the second material layer. The method also includes forming a photonic die over the first waveguide and forming a first cavity in the semiconductor substrate and exposing the first layer. Once formed, the first cavity is filled with a first backfill material adjacent the first layer. The methods also include electrically coupling an electronic die to the photonic die. Some methods include packaging the semiconductor device in a packaged assembly.

Structure and process for photonic packages

An embodiment device includes: a first dielectric layer; a first photonic die and a second photonic die disposed adjacent a first side of the first dielectric layer; a waveguide optically coupling the first photonic die to the second photonic die, the waveguide being disposed between the first dielectric layer and the first photonic die, and between the first dielectric layer and the second photonic die; a first integrated circuit die and a second integrated circuit die disposed adjacent the first side of the first dielectric layer; conductive features extending through the first dielectric layer and along a second side of the first dielectric layer, the conductive features electrically coupling the first photonic die to the first integrated circuit die, the conductive features electrically coupling the second photonic die to the second integrated circuit die; and a second dielectric layer disposed adjacent the second side of the first dielectric layer.

Hybrid integrated circuit packages

A package includes a laser diode includes a bonding layer; a first dielectric layer over the laser diode, wherein the first dielectric layer is directly bonded to the bonding layer of the laser diode; a first silicon nitride waveguide in the first dielectric layer, wherein the first silicon nitride waveguide extends over the laser diode; a second dielectric layer over the first silicon nitride waveguide; a silicon waveguide in the second dielectric layer; an interconnect structure over the silicon waveguide; and conductive features extending through the first dielectric layer and the second dielectric layer to electrically contact the interconnect structure.

Optical devices and methods of manufacture are presented herein. In an embodiment, an apparatus is provided that includes a notch filter, an optical signal detector positioned adjacent to the notch filter, and a mirror positioned to adjacent to the notch filter.

Optical devices and methods of manufacture

An integrated circuit package and a method of forming the same are provided. The method includes attaching an integrated circuit die to a first substrate. A dummy die is formed. The dummy die is attached to the first substrate adjacent the integrated circuit die. An encapsulant is formed over the first substrate and surrounding the dummy die and the integrated circuit die. The encapsulant, the dummy die and the integrated circuit die are planarized, a topmost surface of the encapsulant being substantially level with a topmost surface of the dummy die and a topmost surface of the integrated circuit die. An interior portion of the dummy die is removed. A remaining portion of the dummy die forms an annular structure.

Integrated circuit package and method of forming same

A method includes forming a first photonic package, wherein forming the first photonic package includes patterning a silicon layer to form a first waveguide, wherein the silicon layer is on an oxide layer, and wherein the oxide layer is on a substrate; forming vias extending into the substrate; forming a first redistribution structure over the first waveguide and the vias, wherein the first redistribution structure is electrically connected to the vias; connecting a first semiconductor device to the first redistribution structure; removing a first portion of the substrate to form a first recess, wherein the first recess exposes the oxide layer; and filling the first recess with a first dielectric material to form a first dielectric region.

A structure including a photonic integrated circuit die, an electric integrated circuit die, a semiconductor dam, and an insulating encapsulant is provided. The photonic integrated circuit die includes an optical input/output portion and a groove located in proximity of the optical input/output portion, wherein the groove is adapted for lateral insertion of at least one optical fiber. The electric integrated circuit die is disposed over and electrically connected to the photonic integrated circuit die. The semiconductor dam is disposed over the photonic integrated circuit die. The insulating encapsulant is disposed over the photonic integrated circuit die and laterally encapsulates the electric integrated circuit die and the semiconductor dam.

Optical transceiver and manufacturing method thereof

A device includes a first package connected to an interconnect substrate, wherein the interconnect substrate includes conductive routing; and a second package connected to the interconnect substrate, wherein the second package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler and to a photodetector; a via extending through the substrate; an interconnect structure over the photonic layer, wherein the interconnect structure is connected to the photodetector and to the via; and an electronic die bonded to the interconnect structure, wherein the electronic die is connected to the interconnect structure.

Growing community of inventors

Jhubei, Taiwan

Hsing-Kuo Hsia