Nan Ya Technology Corporation

Hsing-Kan Peng

Shian-Jyh Lin

Chih-Wei Huang

Chao-Sung Lai

Chung-Yuan Lee

A method of patterning a metal alloy material layer having hafnium and molybdenum. The method includes forming a patterned mask layer on a metal alloy material layer having hafnium and molybdenum on a substrate. The patterned mask layer is used as a mask and an etching process is performed using an etchant on the metal alloy material layer having hafnium and molybdenum so as to form a metal alloy layer having hafnium and molybdenum. The etchant includes at least nitric acid, hydrofluoric acid and sulfuric acid. The patterned mask layer is removed.

Method of patterning metal alloy material layer having hafnium and molybdenum

A semiconductor device including a metallic compound HfMoNas an electrode. The work function of the electrode can be modulated by doping the metallic compound with dopants including nitrogen, silicon or germanium. The metallic compound of the present invention is applicable to PMOS, NMOS, CMOS transistors and capacitors.

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Hsinchu County, Taiwan

Hsing-Kan Peng