Entegris, Inc.

Hsing-Chen Wu

Emanuel Israel Cooper

Min-Chieh Yang

Steven M Bilodeau

Sheng-Hung Tu

SeongJin Hong

Li-Min Chen

Jeffrey A Barnes

Chia-Jung Hsu

Chieh Ju Wang

Thomas Parson

Sean Kim

Ming-Chi Liao

Min-chieh Yang

Wen-Haw Dai

Wen Hua Tai

Wei-Ling Lan

The present invention relates to compositions and methods for selectively etching silicon nitride in the presence of silicon oxide, polysilicon and/or metal silicides at a high etch rate and with high selectivity. Additives are described that can be used at various dissolved silica loading windows to provide and maintain the high selective etch rate and selectivity.

Selective etchant compositions and methods

Provided are compositions and methods useful in etching, i.e., removing amorphous carbon hard masks which have been doped with elements such as boron, chlorine, or nitrogen. The compositions utilize concentrated sulfuric acid, water, and at least one oxidizing agent. In the operation of the method, the composition selectively removes the doped hard mask layer, even in the presence of layers such as silicon dioxide, silicon nitride, tantalum nitride, and polysilicon, with good selectivity.

Method for removing hard masks

Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

Silicon nitride etching composition and method

A method of selectively removing aluminium oxide or nitride material from a microelectronic substrate, the method comprising contacting the material with an aqueous etching composition comprising: an etchant comprising a source of fluoride; and a metal corrosion inhibitor; wherein the composition has a pH in the range of from 3 to 8. Aqueous etching compositions and uses are also described.

Selectively etching materials

Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.

Compositions and methods for etching silicon nitride-containing substrates

Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.

Ni:NiGe:Ge selective etch formulations and method of using same

Compositions useful for the passivation of germanium-containing materials on a microelectronic device having same thereon.

Passivation of germanium surfaces

Liquid compositions useful for the cleaning of residue and contaminants from a III-V microelectronic device material, such as InGaAs, without substantially removing the III-V material. The liquid compositions are improvements of the SC1 and SC2 formulations.

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Yonghe, Taiwan

Hsing-Chen Wu