Taiwan Semiconductor Manufacturing Comp. Ltd.

Marvellous Day Industrial International Limited

Hsin-Wei Wu

Chun-Feng Nieh

Tsun-Jen Chan

Shih-Ming Chang

Chien-Chih Chen

Yu-Chang Lin

Chun-Hung Liu

Chien-Cheng Chen

Chia-Hua Chang

Wen Lo

Ta-Wei Ou

Hsing-Jui Lee

Yu Chi-Fu

Yu-Chi Fu

The present disclosure proposes an article, which includes a support structure, a plurality of needles connected to the support structure, and a light string. The light string includes a flexible conductive wire affixed to the needles, and a plurality of light sources. Each of the light sources includes at least two leads electrically coupled to the flexible conductive wire. The leads of the light sources arranged at different heights of the article include different lengths.

Light string and ornamental article including the same

An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.

Dummy insertion for improving throughput of electron beam lithography

A method includes providing a semiconductor substrate, and performing an ion implantation process to a surface of the substrate. The ion implantation process includes intermittently applying an ion beam to the surface, and while applying the ion beam, applying a heating process with a heating temperature above a threshold level.

High temperature intermittent ion implantation

The present disclosure discloses a method of fabricating a semiconductor device. A fin structure is formed over a substrate. The fin structure contains a semiconductor material. A first implantation process is performed to a region of the fin structure to form a fin seed within the region of the fin structure. The fin seed has a crystal structure. The first implantation process is performed at a process temperature above about 100 degrees Celsius. A second implantation process is performed to the region of the fin structure to cause the region of the fin structure outside the fin seed to become amorphous. The second implantation process is performed at a process temperature below about 0 degrees Celsius. Thereafter, an annealing process is performed to recrystallize the region of the fin structure via the fin seed.

Formation of high quality Fin in 3D structure by way of two-step implantation

Formation of high quality fin in 3D structure by way of two-step implantation

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Hsinchu, Taiwan

Hsin-Wei Wu