Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsin-Ting Huang

Shang-Ying Tsai

Jung-Huei Peng

Wen-Chuan Tai

Chia-Ming Hung

Yao-Te Huang

Hsiang-Fu Chen

Shao-Chi Yu

Yuan-Chih Hsieh

Hung-Hua Lin

Chun-Wen Cheng

Ping-Yin Liu

Kuei-Sung Chang

Xin-Hua Huang

Allen Timothy Chang

Chang-Yi Yang

Lung Yuan Pan

Tien-Kan Chung

Chia-Shiung Tsai

Lan-Lin Chao

Yi-Chuan Teng

Chin-Min Lin

Ming-Tung Wu

Chia-Pao Shu

Chin-Yi Cho

Bruce C S Chou

Li-Min Hung

Alexander Kalnitsky

Jiou-Kang Lee

Ching-Kai Shen

Martin Liu

Richard Chu

Yen-Cheng Liu

Lin-Min Hung

Hung Hua Lin

A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.

MEMS devices with an element having varying widths

A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes a MEMS device in a MEMS area, where a first metal layer is connected to a first metal connect adjacent the MEMS area and a cap is over the MEMS area to vacuum seal the MEMS area. A first wafer portion is over and bonded to the first metal layer which connects the first metal connect to a first I/O port using metal routing. The first metal layer and the first wafer portion bond requires 10% less bonding area than a bond not including the first metal layer. The semiconductor arrangement including the first metal layer has increased conductivity and requires less processing than an arrangement that requires a dopant implant to connect a first metal connect to a first I/O port and has a better vacuum seal due to a reduction in outgassing.

Semiconductor arrangement and formation thereof

A method for manufacturing a microelectromechanical systems (MEMS) device is provided. According to some embodiments of the method, a semiconductor structure is provided. The semiconductor structure includes an integrated circuit (IC) substrate, a dielectric layer arranged over the IC substrate, and a MEMS substrate arranged over the IC substrate and the dielectric layer to define a cavity between the MEMS substrate and the IC substrate. The MEMS substrate includes a MEMS hole in fluid communication with the cavity and extending through the MEMS substrate. A sealing layer is formed over or lining the MEMS hole to hermetically seal the cavity with a reference pressure while the semiconductor structure is arranged within a vacuum having the reference pressure. The semiconductor structure resulting from application of the method is also provided.

Method for sealing a cavity of a microelectromechanical systems (MEMS) device using a seal layer covering or lining a hole in fluid communication with the cavity

Methods of forming micro-electro-mechanical devices including a conductive feature extending through an escort ring

A semiconductive structure includes a first substrate including a first surface and a second surface opposite to the first surface, a second substrate disposed over the first surface and including a first device and a second device, a first capping structure disposed over the second substrate, and including a via extending through the first capping structure to the second device, a first cavity surrounding the first device and defined by the first capping structure and the first substrate, a second cavity surrounding the second device and defined by the first capping structure and the first substrate, and a second capping structure disposed over the first capping structure and covering the via, wherein the second cavity and the via are sealed by the second capping structure.

Semiconductive structure and manufacturing method thereof

The present disclosure relates to a wafer level chip scale package (WLCSP) with a stress absorbing cap substrate. The cap substrate is bonded to a die through a bond ring and a bond pad arranged on an upper surface of the cap substrate. A through substrate via (TSV) extends from the bond pad, through the cap substrate, to a lower surface of the cap substrate. Further, recesses in the upper surface extend around the bond pad and along sidewalls of the bond ring. The recesses absorb induced stress, thereby mitigating any device offset in the die.

Structure and method to mitigate soldering offset for wafer-level chip scale package (WLCSP) applications

The present disclosure relates to a method of forming a micro-electro mechanical system (MEMs) structure. In some embodiments, the method may be performed by providing a device substrate having a first MEMS device and a second MEMS device, and by providing a capping structure having a first cavity and a second cavity. The capping structure is bonded to the device substrate, such that the first cavity is arranged over the first MEMS device and the second cavity is arranged over the second MEMS device. A first pressure is established within the first cavity and the second cavity. A vent is selectively etched within the capping structure to change the first pressure within the second cavity to a second pressure, which is different from the first pressure.

Microelectromechanical systems (MEMS) devices at different pressures

The present disclosure is directed to a monolithic MEMS (micro-electromechanical system) platform having a temperature sensor, a pressure sensor and a gas sensor, and an associated method of formation. In some embodiments, the MEMS platform includes a semiconductor substrate having one or more transistor devices and a temperature sensor. A dielectric layer is disposed over the semiconductor substrate. A cavity is disposed within an upper surface of the dielectric layer. A MEMS substrate is arranged onto the upper surface of the dielectric layer and has a first section and a second section. A pressure sensor has a first pressure sensor electrode that is vertically separated by the cavity from a second pressure sensor electrode within the first section of a MEMS substrate. A gas sensor has a polymer disposed between a first gas sensor electrode within the second section of a MEMS substrate and a second gas sensor electrode.

Monolithic MEMS platform for integrated pressure, temperature, and gas sensor

The present disclosure relates to a MEMS device with a hermetic sealing structure, and an associated method. In some embodiments, a first die and a second die are bonded at a bond interface region to form a chamber. A conformal thin film structure is disposed covering an outer sidewall of the bond interface region to provide hermetic sealing. In some embodiments, the conformal thin film structure is a continuous thin layer covering an outer surface of the second die and a top surface of the first die. In some other embodiments, the conformal thin film structure comprises several discrete thin film patches disposed longitudinal.

Thin film structure for hermetic sealing

A wafer seal ring may be formed on a wafer having a pattern structure with a pattern density. The wafer seal ring pattern structure may include a plurality of lines having a width and a spacing that may be approximately equal to a width and a spacing of die bond rings on the wafer. The wafer having the wafer seal ring formed thereon may be bonded to a wafer that may not have a wafer seal ring. A pair of wafers may be formed with respective wafer seal rings formed in a corresponding manner. The pair of wafers may be bonded together with the wafer seal rings aligned and bonded together to form a seal ring structure between the bonded wafers.

Method and apparatus for a wafer seal ring

Some embodiments relate to multiple MEMS devices that are integrated together on a single substrate. A device substrate comprising first and second micro-electro mechanical system (MEMS) devices is bonded to a capping structure. The capping structure comprises a first cavity arranged over the first MEMS device and a second cavity arranged over the second MEMS device. The first cavity is filled with a first gas at a first gas pressure. The second cavity is filled with a second gas at a second gas pressure, which is different from the first gas pressure. A recess is arranged within a lower surface of the capping structure. The recess abuts the second cavity. A vent is arranged within the capping structure. The vent extends from a top of the recess to the upper surface of the capping structure. A lid is arranged within the vent and configured to seal the second cavity.

A semiconductor device includes a device substrate and a conductive capping substrate. The device substrate includes at least one micro-electro mechanical system (MEMS) device. The conductive capping substrate is bonded to the device substrate and includes a cap portion covering the MEMS device, and a conductor portion in electrical contact with the device substrate.

Semiconductor device and method of manufacturing

A semiconductor device includes a moveable element over a substrate, wherein the moveable element is moveable relative to the substrate. The semiconductor device further includes a first anchor portion connected to the substrate; and a second anchor portion connected to the substrate on an opposite side of the moveable element from the first anchor portion. The semiconductor device further includes a first connector configured to connect the moveable element to the first anchor portion. The semiconductor device further includes a second connector configured to connect the moveable element to the second anchor portion. The semiconductor device further includes a conductive wire loop on the moveable element; and a connection wire electrically connected to a first end of the conductive wire loop, wherein the connection wire extends across the first connector to the first anchor portion.

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Bade, Taiwan

Hsin-Ting Huang