Taiwan Semiconductor Manufacturing Comp. Ltd.

Vanguard International Semiconductor Corporation

Hsin-Hui Lee

Chao-Yuan Su

Han-Liang Tseng

Hsueh-Jung Lin

Yen-Ming Chen

Kai-Ming Ching

Chia-Fu Lin

Mirng-Ji Lii

Li-Chih Chen

Yin Jen Chen

Wen-Chih Lu

Chien-Hsiun Lee

Kwang-Ming Lin

Jiunn-Liang Yu

Si-Twan Chen

Ting-Jung Lu

Chenming Hu

Szu Wei Lu

Wen-Hsiang Tseng

William Cheng

Shin-Puu Jeng

Dun-Nian Yaung

Jen-Cheng Liu

Jeng-Shyan Lin

Wen-De Wang

Shu-Ting Tsai

Ta-Min Lin

Hao-Yi Tsai

Szu-Wei Lu

Fu-Liang Yang

Chao-Hsiung Wang

Pei-Haw Tsao

Chien-Chao Huang

Shun-Liang Hsu

Wen-Chang Kuo

Chender Huang

Ming-Chung Sung

Chih-Hsien Chen

Shang Y Hou

Yue-Ying Jian

Chin-Cheng Li

Li-Chi Chen

Shang-Yun Hou

Chih-Cherng Liao

Chung Yu Wang

Chung-Ren Lao

Wu-Hsi Lu

Shih-Hao Liu

Yun-Chou Wei

Ming-Cheng Lo

Chen Yung Ching

Li-Chen Chen

Pei-Hwa Tsao

Chen-Yung Ching

Mickey Ken

Hao-Chih Tien

Kai-Ming Chin

Yeng-Ming Chen

Kuo-Ching Lee

Chia-Tsun Hsu

Chia Fu Lin

A method for forming semiconductor devices includes providing a substrate with a conductive pad formed thereon; forming a transparent structure over the substrate, wherein the transparent structure includes a plurality of collimating pillars adjacent to the conductive pad; forming a light-shielding structure over the plurality of collimating pillars and the conductive pad; performing a cutting process to remove one or more materials directly above the conductive pad, while leaving remaining material to cover the conductive pad, wherein the material includes a portion of the light-shielding structure; and performing an etching process to remove the remaining material to expose the conductive pad.

Semiconductor devices and methods for forming the same

An optical sensor device and a method for forming the same are provided, including forming a curable transparent material on a substrate, wherein the substrate has a plurality of optical sensor units therein; providing a transparent template, which has a plurality of concaves; imprinting the curable transparent material with the transparent template to form a plurality of convexes corresponding to the plurality of concaves; and curing the curable transparent material to form a transparent layer having a micro-lens array. The step of curing the curable transparent material includes adhering the transparent template to the curable transparent material to act as a cover plate for the optical sensor device.

Optical sensor device with reduced thickness and method for forming the same

A method for forming a semiconductor device is provided. The method includes forming a sensor pixel array in a substrate, forming several transparent pillars over the substrate, and forming a light shielding layer over the substrate to cover the transparent pillars. The sensor pixel array has several sensor pixels, and each of the transparent pillars is correspondingly disposed on one of the sensor pixels of the sensor pixel array. The light shielding layer is a multi-layer structure. The method further includes performing a planarization process to expose the top surface of the transparent pillars.

An optical sensor includes pixels disposed in a substrate. A light collimating layer is disposed on the substrate and includes a transparent layer, a light-shielding layer, and transparent pillars. The transparent layer blanketly disposed on the substrate covers the pixels and the region between the pixels. The light-shielding layer is disposed on the transparent layer and between the transparent pillars. The transparent pillars penetrating through the light-shielding layer are correspondingly disposed on the pixels.

Optical sensors and methods for forming the same

A semiconductor device includes a substrate and a light collimator layer. The substrate has a plurality of pixels. The light collimator layer is disposed on the substrate. The light collimator layer includes a light shielding layer disposed on the substrate, a plurality of transparent pillars disposed in the light shielding layer, and a plurality of optical microlenses disposed on the pixels.

Semiconductor device and method for forming the same

A method for forming a semiconductor device is provided. The method includes providing a substrate having a scribe line, forming a sensing pixel array in the substrate, forming a plurality of transparent pillars over the substrate, and forming a light shielding layer over the substrate and the transparent pillars. The sensing pixel array has a plurality of sensing pixels, and each of the transparent pillars is correspondingly disposed on one of the sensing pixels of the sensing pixel array. The method further includes performing a first cutting process to form an opening directly above the scribe line, while leaving the remaining material covering the scribe line, and performing an etching process along the opening to remove the remaining material until the scribe line is exposed.

A method for forming a semiconductor device is provided. The method includes providing a substrate, placing a first stencil having a first openwork pattern on the substrate, applying a first material onto the substrate through the first stencil, and removing the first stencil from the substrate. The first material includes a transparent material. The method also includes placing a second stencil having a second openwork pattern on the substrate, applying a second material onto the substrate through the second stencil, and removing the second stencil from the substrate. The second material includes a light-shielding material, and the second openwork pattern is different from the first openwork pattern.

Semiconductor device and fingerprint identification device

An optical sensor includes a plurality of pixels disposed in a substrate and a light collimating layer. The light collimating layer is disposed on the substrate. The light collimating layer includes a light-shielding layer, a plurality of transparent pillars, and a plurality of first dummy transparent pillars. The light-shielding layer is disposed on the substrate. The plurality of transparent pillars pass through the light-shielding layer and are disposed correspondingly on the plurality of pixels. The plurality of first dummy transparent pillars that pass through the light-shielding layer are disposed on a first peripheral region of the light collimating layer, wherein the plurality of first dummy transparent pillars surround the plurality of transparent pillars from a top view.

Optical sensor and method for forming the same

An optical sensor includes a substrate and a light collimating layer. The substrate includes a sensor pixel array having a plurality of sensor pixels. The light collimating layer is disposed on the substrate. The light collimating layer includes a patterned seed layer, a plurality of transparent pillars, a metal layer, and a mask layer. The patterned seed layer is disposed on the substrate. The patterned seed layer exposes the sensor pixel array. The transparent pillars are disposed on the sensor pixel array. The metal layer is disposed on the patterned seed layer and in between the transparent pillars. The mask layer is disposed on the metal layer.

An optical sensor includes pixels disposed in a substrate and a light collimating layer disposed on the substrate. The light collimating layer includes a first light-shielding layer, first transparent pillars, a second light-shielding layer, and second transparent pillars. The first light-shielding layer is disposed on the substrate. The first transparent pillars through the first light-shielding layer are correspondingly disposed on the pixels. The second light-shielding layer is disposed on the first light-shielding layer and the first transparent pillars. The second transparent pillars through the second light-shielding layer are correspondingly disposed on the first transparent pillars. The top surface area of each of the first transparent pillars is not equal to the bottom surface area of each of the second transparent pillars.

A semiconductor device is provided. The semiconductor device includes a substrate. The substrate includes a plurality of pixels. The semiconductor device also includes a light collimator layer disposed on the substrate. The light collimator layer includes a transparent connection feature disposed on the substrate, and a plurality of transparent pillars disposed on the transparent connection feature. The plurality of transparent pillars cover the plurality of pixels, and the transparent connection feature connects to the plurality of transparent pillars. The plurality of transparent pillars and the transparent connection feature are made of a first material which includes a transparent material. The light collimator layer also includes a plurality of first light-shielding features disposed on the transparent connection feature. The top surface of one of the transparent pillars is level with the top surface of one of the first light-shielding features.

An optical sensor is provided, wherein the optical sensor includes an image sensing array, a collimator layer, and a light-shielding layer. The image sensor array includes a plurality of pixels. The collimator layer is disposed on the image sensor array and includes a plurality of openings corresponding to the pixels. The collimator layer includes a first surface facing the image sensor array and a second surface opposite to the first surface. The light-shielding layer is disposed on sidewalls of the openings.

Optical sensor and manufacturing method thereof

An optical sensor structure is provided. The optical sensor structure includes a sensor pixel array in a substrate, a light collimating layer on the substrate, and at least one through-substrate via. The sensor pixel array has a plurality of sensor pixels. The at least one through-substrate via extends from a first surface to an opposite second surface of the substrate. The at least one through-substrate via is in the sensor pixel array and vertically misaligned with the plurality of sensor pixels.

Optical sensor structure and method for forming the same

An optical device is provided. The optical device includes a substrate including a plurality of pixel units, a dielectric layer disposed on the substrate, a patterned light-transmitting layer disposed on the dielectric layer and corresponding to the plurality of pixel units, and a plurality of continuous light-shielding layers disposed on the dielectric layer and located on both sides of the patterned light-transmitting layer. A method for fabricating an optical device is also provided.

Optical devices and fabrication method thereof

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Kaohsiung, Taiwan

Hsin-Hui Lee