United Microelectronics Corp.

Hsin-Hsing Chen

Chih-Chun Wang

Tsun-Min Cheng

An-Chi Liu

Chih-Yueh Li

Yu-Ho Chiang

Chun-Chi Huang

Chun-Min Wang

Yung-Hung Yen

A semiconductor device includes an opening, a metal nitride layer, a bilayer metal layer and a conductive bulk layer. The opening is disposed in a first dielectric layer. The metal nitride layer is disposed in the opening. The bilayer metal layer is disposed on the metal nitride layer in the opening, where the bilayer metal layer includes a first metal layer and a second metal layer which is disposed on the first metal layer and has a greater metal concentration than that of the first metal layer. The conductive bulk layer is filled in the opening.

Semiconductor device having bilayer metal layer

A stress film forming method is used in a fabrication process of a semiconductor device. Firstly, a substrate is provided, wherein a first-polarity-channel MOSFET and a second-polarity-channel MOSFET are formed on the substrate. Then, at least one deposition-curing cycle process is performed to form a cured stress film over the first-polarity-channel MOSFET and the second-polarity-channel MOSFET. Afterwards, an additional deposition process is performed form a non-cured stress film on the cured stress film, wherein the cured stress film and the non-cured stress film are collectively formed as a seamless stress film.

Stress film forming method and stress film structure

A capacitance dielectric layer is provided. The capacitance dielectric layer includes a first dielectric layer, a second dielectric layer and a silicon nitride stacked layer. The silicon nitride stacked layer is disposed between the first dielectric layer and the second dielectric layer. The structure of the capacitance dielectric layer permits an increase in the capacitance per unit area by decreasing the thickness of the capacitance dielectric layer and eliminates the problems of having a raised leakage current and a diminished breakdown voltage.

Capacitance dielectric layer and capacitor

Growing community of inventors

Ping-Tung County, Taiwan

Hsin-Hsing Chen