Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsin-Ching Shih

Hun-Jan Tao

Li-Te S Lin

Yi-Nien Su

Bor-Wen Chan

Peng-Fu Hsu

Baw-Ching Perng

Chun-Li Chou

Yi-Chen Huang

Ming-Hong Hsieh

Jun-Lung Huang

Lawrance Hsu

Hong-J Tao

Li-Chie Chiao

A method for removing organic material from an opening in a low k dielectric layer and above a metal layer on a substrate is disclosed. An ozone water solution comprised of one or more additives such as hydroxylamine or an ammonium salt is applied as a spray or by immersion. A chelating agent may be added to protect the metal layer from oxidation. A diketone may be added to the ozone water solution or applied in a gas or liquid phase in a subsequent step to remove any metal oxide that forms during the ozone treatment. A supercritical fluid mixture that includes COand ozone can be used to remove organic residues that are not easily stripped by one of the aforementioned liquid solutions. The removal method prevents changes in the dielectric constant and refractive index of the low k dielectric layer and cleanly removes residues which improve device performance.

Process for removing organic materials during formation of a metal interconnect

A cleaning tool for cleaning substrates, comprising a circulation conduit through which is circulated a cleaning liquid or gas. The circulation conduit is disposed in fluid communication with an upstream flow chamber and a downstream cleaning chamber, the cross-sectional area of which cleaning chamber is less than the cross-sectional area of the flow chamber. In use, the cleaning chamber receives a wafer substrate for cleaning of particles or removal of polymer films from the substrate. The smaller cross-sectional area of the cleaning chamber accelerates the flow of a cleaning fluid flowing through the cleaning chamber from the flow chamber. The rapidly-flowing cleaning fluid removes the particles and/or films from the substrate while preventing dropping of the removed particles or re-deposition of the film back onto the substrate. A particle filter may be provided in the circulation conduit downstream of the cleaning chamber for removing the particles.

Tool for cleaning substrates

A new method is provided for the removal of polymer, possibly mixed with copper oxide residue, from exposed surfaces after an etch stop layer has been removed. The exposed surfaces are treated with a first plasma etch followed by a DI water rinse after which a second plasma etch of the exposed surfaces is performed. By selecting the chemistry and the conditions for the first and the second plasma etch, polymer residues and formed copper oxide residues are removed from the exposed surfaces.

Dry-wet-dry solvent-free process after stop layer etch in dual damascene process

Growing community of inventors

Hsin-Chu, Taiwan

Hsin-Ching Shih