Macronix International Co., Ltd.

Hsin-Cheng Liu

Wei-Chen Chen

Ta-Hung Yang

Chih-Ping Chen

Cheng-Yi Lin

Mao-I Ting

Ching-Ping Wu

Shao-Chung Hsu

Andy Lin

Yih-Cheng Shih

H Wally Lee

Han-Maou Chang

Ma Chia-Chih

Shih-Hao Shih

Nan-Tzu Lian

Jung-Kuei Lu

Chi-Chen Luo

De-Chuan Liu

A gas conduit for a load lock chamber. The gas conduit connects to a gas source to introduce gas from the gas source into the load lock chamber of semiconductor equipment. The structure includes a filter mounted on the top surface of the load lock chamber, a pressure limitative device to maintain a preset pressure of gas source, and a gas inlet device including an inlet end connected to the pressure limitative device and an outlet end connected to the filter, wherein the gas inlet device introduces gas from the gas source into the load lock chamber with its maximum flow rate when breaching the vacuum therein.

Gas conduit for a load lock chamber

A method of removing HDP oxide deposition comprises the steps of: (1) etching the HDP oxide deposition by in-side-out model, wherein the etching rate in the center of the substrate is faster than the edges of the substrate; (2) etching the HDP oxide deposition by out-side-in model, wherein the etching rate in the edges of the substrate is faster than the center of the substrate; and (3) removing the remaining silicon oxide layer using chemical-mechanical polishing (CMP). According to the method of the invention, the HDP oxide deposition can be planarized more uniform.

Method of removing HDP oxide deposition

The current invention provides a method for analyzing process variations that occur during integrated circuit fabrication. Critical dimension data is collected for each layer of the integrated circuit fabrication process for a period of time and a shift indicator that indicates variation in the critical dimension data for each layer of the integrated circuit fabrication process is calculated. A machine drift significance indicator is also calculated for each machine used in each layer of the integrated circuit fabrication process, and a maximum shift of mean value for each layer of the integrated circuit fabrication process is defined. The shift indicator, the maximum shift of mean value and the machine drift significance indicator are used to determine at least one likely cause of variation in critical dimension for each layer of the integrated circuit fabrication process.

Critical dimension statistical process control in semiconductor fabrication

Growing community of inventors

Hsinchu, Taiwan

Hsin-Cheng Liu