Industrial Technology Research Institute

Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsin-Cheng Lai

Chieh-Wei Feng

Tzu-Yang Ting

Jui-Wen Yang

Tai-Jui Wang

Yu-Hua Chung

Shao-An Yan

Chien-Hsun Chu

Tzu-Hao Yu

Provided is a semiconductor package structure including a redistribution layer (RDL) structure, a chip, an electronic device and a stress compensation layer. The RDL structure has a first surface and a second surface opposite to each other. The chip is disposed on the first surface and electrically connected to the RDL structure. The electronic device is disposed in the RDL structure, electrically connected to the chip, and includes a dielectric layer disposed therein. The stress compensation layer is disposed in or outside the RDL structure. The dielectric layer provides a first stress between 50 Mpa and 200 Mpa in a first direction perpendicular to the second surface, the stress compensation layer provides a second stress between 50 Mpa and 200 Mpa in a second direction opposite to the first direction, and the difference between the first stress and the second stress does not exceed 60 Mpa.

Semiconductor package structure

A redistribution structure including a first redistribution layer is provided. The first redistribution layer includes a dielectric layer; at least one conductive structure located in the dielectric layer, wherein the at least one conductive structure has a width L; and at least one dummy structure located adjacent to the at least one conductive structure and located in the dielectric layer, and the at least one dummy structure has a width D, wherein there is a gap width S between the at least one dummy structure and the at least one conductive structure, and a degree of planarization DOP of the first redistribution layer is greater than or equal to 95%, wherein DOP=[1&#x2212;(h/T)]*100%, and h refers to a difference between a highest height and a lowest height of a top surface of the dielectric layer; and T refers to a thickness of the at least one conductive structure.

Redistribution structure and forming method thereof

Growing community of inventors

Taoyuan, Taiwan

Hsin-Cheng Lai