Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsin-Chen Tsai

Yu-Hung Lin

Shih-Chi Lin

Yu-Min Chang

Yao-Hsiang Liang

Ching-Fu Yeh

An improved interconnect structure and a method for forming the interconnect structure is disclosed that allows the interconnect structure to achieve a lower Rc. To lower the Rc of the interconnect structure, an &#x3b1;-phase inducing metal layer is introduced on a first Ta barrier layer of &#x3b2; phase to induce the subsequent deposition of Ta thereon into the formation of an &#x3b1;-phase Ta barrier layer. The subsequently deposited Ta barrier layer with a primary crystallographic structure of &#x3b1; phase has a lower Rc than that of the &#x3b2;-phase Ta barrier layer.

Growing community of inventors

Hsinchu, Taiwan

Hsin-Chen Tsai