Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsin-Chang Lee

Ta-Cheng Lien

Chia-Jen Chen

Pei-Cheng Hsu

Anthony Yen

Yun-Yue Lin

Chih-Cheng Lin

Ping-Hsun Lin

Chien-Cheng Chen

Ming-Wei Chen

Wen-Chang Hsueh

Jong-Yuh Chang

Chin-Hsiang Lin

Jeng-Horng Chen

Chih-Tsung Shih

Tran-Hui Shen

Hung-Yi Tsai

Tzu Yi Wang

Shinn-Sheng Yu

Chih-Chiang Tu

Hao-Ping Cheng

Chun-Fu Yang

Shih-Ming Chang

Ting-Hao Hsu

Kuan-Wen Lin

Chue San Yoo

Ching-Huang Chen

Yih-Chen Su

Chen-Yang Lin

Yen-Cheng Ho

Chen-Shao Hsu

Huan-Ling Lee

Da-Wei Yu

ShinAn Ku

Sheng-Chi Chin

Wei-Che Hsieh

Hsuan-Chen Chen

Tao-Min Huang

Burn Jeng Lin

Hung-Chang Hsieh

Hua-Tai Lin

Chun-Lang Chen

Chi-Lun Lu

Tsiao-Chen Wu

Chang-Cheng Hung

Li-Hsin Wang

Chung-Hsuan Liu

Ming-Jiun Yao

Lee-Chih Yeh

Ku-Hsiang Sung

Szu-Ping Tsai

Shih-Jui Huang

Gaston Lee

Amo Chen

Tsai-Sheng Gau

Yen-Cheng Lu

Yao-Ching Ku

Wei-Jen Lo

Kun-Lung Hsieh

Ching-Fang Yu

Hung Chang Hsieh

Ren-Guey Hsieh

Chih-cheng Chen

Chi-Yuan Sun

Tzu-Yi Wang

Hong-Chang Hsieh

Ken Wu

Luke Hsu

Mark Chien

Hsuan-I Wang

Wei-Shiuan Chen

Yeh Lee-Chih

Chi-Kuang Tsai

Yi-Fu Hsieh

Chia-Shiung Tsai

Li-Jui Chen

Chih-Wei Hsu

Ping-Yin Liu

Wen-Chun Huang

Wen-Chuan Wang

Kuei Shun Chen

Cheng-Cheng Kuo

Shu-Hao Chang

Shih-Che Wang

Chih-Shiang Chou

Fu-Sheng Chu

Tzu-Chun Lo

Ching-Che Tsai

Yen-Bin Huang

Chen-Yuan Hsia

Amö Chen

Chia-Tsung Shih

Pei-Chung Hsu

Chi-Ping Wen

Kai-Chung Liu

Chih-Tao Chien

Wen-Yao Wei

Yun-yue Lin

Kevin Tanady

Yen-CHeng Ho

In a method of manufacturing a reflective mask, a photo resist layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer on the substrate, a capping layer on the reflective multilayer, an absorber layer on the capping layer and a hard mask layer, and the absorber layer is made of Cr, CrO or CrON. The photo resist layer is patterned, the hard mask layer is patterned by using the patterned photo resist layer, the absorber layer is patterned by using the patterned hard mask layer, and an additional element is introduced into the patterned absorber layer to form a converted absorber layer.

EUV photo masks and manufacturing method thereof

Methods for plasma stability in a plasma treatment tool are disclosed. A laser is positioned within a plasma treatment chamber within a skin depth of the electromagnetic field generated therein. The laser can be synchronized with the electrical triggering signals that generate the electromagnetic field. This scheme provides a stable and efficient method of plasma ignition.

Methods and systems for improving plasma ignition stability

A method of inspecting an outer surface of a mask pod includes moving a stage holding a mask pod such that the stage stops at each location of a plurality of locations under an outer surface of the mask pod for a predefined amount of time. At each location of the plurality of locations, the method further includes directing a stream of air to the outer surface of the mask pod, capturing an image of scattered air from each location of the plurality of locations of the outer surface of the mask pod, and determining a number of particles in the scattered air as a sampled number of particles based on the captured image. The method also includes generating a map of particles on the outer surface of the mask pod based on the sampled number of particles at each of the plurality of locations.

High throughput and high position accurate method for particle inspection of mask pods

In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.

Method and device for cleaning substrates

A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.

A lithography mask including a substrate, a phase shift layer on the substrate and an etch stop layer is provided. The phase shift layer is patterned and the substrate is protected from etching by the etch stop layer. The etch stop layer can be a material that is semi-transmissive to light used in photolithography processes or it can be transmissive to light used in photolithography processes.

Lithography mask and methods

A reflective mask includes a substrate, a lower reflective multilayer disposed over the substrate, an intermediate layer disposed over the lower reflective multilayer, an upper reflective multilayer disposed over the intermediate layer, a capping layer disposed over the upper reflective multilayer, and an absorber layer disposed in a trench formed in the upper reflective layers and over the intermediate layer. The intermediate layer includes a metal other than Cr, Ru, Si, Si compound and carbon.

A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.

Methods of making a semiconductor device

Coated nanotubes and bundles of nanotubes are formed into membranes useful in optical assemblies in EUV photolithography systems. These optical assemblies are useful in methods for patterning materials on a semiconductor substrate. Such methods involve generating, in a UV lithography system, UV radiation. The UV radiation is passed through a coating layer of the optical assembly, e.g., a pellicle assembly. The UV radiation that has passed through the coating layer is passed through a matrix of individual nanotubes or matrix of nanotube bundles. UV radiation that passes through the matrix of individual nanotubes or matrix of nanotube bundles is reflected from a mask and received at a semiconductor substrate.

Optical assembly with coating and methods of use

The present disclosure describes a method of patterning a semiconductor wafer using extreme ultraviolet lithography (EUVL). The method includes receiving an EUVL mask that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further includes patterning the absorber layer to form a trench on the EUVL mask, wherein the trench has a first width above a target width. The method further includes treating the EUVL mask with oxygen plasma to reduce the trench to a second width, wherein the second width is below the target width. The method may also include treating the EUVL mask with nitrogen plasma to protect the capping layer, wherein the treating of the EUVL mask with the nitrogen plasma expands the trench to a third width at the target width.

Method of critical dimension control by oxygen and nitrogen plasma treatment in EUV mask

A method of making a semiconductor device includes forming at least one fiducial mark on a photomask. The method further includes defining a pattern including a plurality of sub-patterns on the photomask in a pattern region. The defining the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns.

Photomask including fiducial mark and method of making a photomask

In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.

Method of manufacturing photo masks

An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a capping layer on the reflective multilayer stack is provided. The reflective multilayer stack is treated prior to formation of the capping layer on the reflective multilayer stack. The capping layer is formed by an ion-assisted ion beam deposition or an ion-assisted sputtering process.

EUV mask blank and method of making EUV mask blank

In a method of cleaning a photo mask, the photo mask is placed on a support such that a pattered surface faces down, and an adhesive sheet is applied to edges of a backside surface of the photo mask.

Cleaning method for photo masks and apparatus therefor

An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a multi-layer patterned absorber layer on the reflective multilayer stack is provided. Disclosed embodiments include an absorber layer that includes an alloy comprising ruthenium (Ru), chromium (Cr), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), tungsten (W) or palladium (Pd), and at least one alloying element. The at least one alloying element includes ruthenium (Ru), chromium (Cr), tantalum (Ta), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), hafnium (Hf), boron (B), nitrogen (N), silicon (Si), zirconium (Zr) or vanadium (V). Other embodiments include a multi-layer patterned absorber structure with layers that include an alloy and an alloying element, where at least two of the layers of the multi-layer structure have different compositions.

Extreme ultraviolet mask with alloy based absorbers

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Zhubei, Taiwan

Hsin-Chang Lee