Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsien Jung Chen

Wei-Cheng Wu

Kuo-Ching Huang

Harry-Hak-Lay Chuang

Henry Wang

Chien Hung Liu

Tsung-Hao Yeh

Hsin Fu Lin

A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.

Semiconductor-on-insulator (SOI) semiconductor structures including a high-k dielectric layer and methods of manufacturing the same

Growing community of inventors

Hsinchu, Taiwan

Hsien Jung Chen