Patterson + Sheridan Llp

Hsiao-Lin Yang

Tae Kyung Won

Dong-Kil Yim

Harvey You

Wan-Yu Lin

Xuena Zhang

Wenqing Dai

Yun-chu Tsai

Embodiments of the disclosure generally provide methods of forming a capacitor with high capacitance and low leakage as well as a good interface control for thin film transistor (TFT) applications. In one embodiment, a thin film transistor structure includes a capacitor formed in a thin film transistor device. The capacitor further includes a common electrode disposed on a substrate, a dielectric layer formed on the common electrode and a pixel electrode formed on the dielectric layer. An interface protection layer formed between the common electrode and the dielectric layer, or between the dielectric layer and the pixel electrode. A gate insulating layer fabricated by a high-k material may also be utilized in the thin film transistor structure.

Interface engineering for high capacitance capacitor for liquid crystal display

Growing community of inventors

Taipei, Taiwan

Hsiao-Lin Yang