Kinik Company

Hsiao-Kuo Chang

Chih-Peng Chen

Jen-Sheuan Huang

Shih-Pang Wen

Na-Ling Chen

A diamond substrate and a method for fabricating the same are provided wherein a SiC layer is formed on a lower surface of a diamond layer for preventing the diamond layer from being deformed after the process of forming the diamond substrate, and then a semiconductor layer is formed on the diamond layer or directly formed on the surface of the SiC layer. Thereby, the lattice mismatch between the diamond film layer and the semiconductor layer is mitigated by the SiC layer, and the crystalline quality of the semiconductor layer is improved, the fabricating process of the diamond substrate is simplified, and the performance and stability are enhanced.

Diamond substrate and method for fabricating the same

A method for manufacturing a diamond film is provided. The material with a low thermal decomposition point is used as a substrate. A buffer layer is formed on the substrate by coating or deposition, and then a diamond film is coated thereon, fitting the shape of the required diamond film. With the buffer layer, the coating or deposition uniformity of the diamond film is improved, and the problems such as thermal stress cracking and assembly damage are solved as well. During a subsequent process of forming the diamond film, the substrate is thermally decomposed due to a high temperature, such that the problems such as stripping and die loss are overcome.

Growing community of inventors

Taipei, Taiwan

Hsiao-Kuo Chang