Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsiang-Fan Lee

Kuo-Chi Tu

Chi-Hsi Wu

Kuo-Chyuan Tzeng

Szu-Po Huang

Shin-Puu Jeng

Chen-Jong Wang

Wensen Hung

Kim Hong Chen

Sung-Hui Huang

Kuan-Yu Huang

Shu-Chia Hsu

Luan Conn Tran

Pai-Yuan Li

Chen-Hua Douglas Yu

Wen-Chih Chiou

Chun-Yao Chen

Shih-Peng Tai

Tang-Jung Chiu

Tzu-Kai Lan

Pai Yuan Li

Ying-Shin Han

Chung-Yi Chen

Da-Cyuan Yu

Shou-Chih Yin

Jhon-Jhy Liaw

An-Jhih Su

Chi-Hsin Lo

Ching-Sen Kuo

Shih-Wei Wang

Chia-Tong Ho

Yi-Miaw Lin

Liang Szuma

Ming-Hsung Chang

Yi-Jiun Lin

Jian-Yu Shen

Kuo-Wei Chu

C Y Shen

Buh Fang Chen

A semiconductor device includes a substrate, an electronic component, a ring structure and an adhesive layer. The substrate has a first surface. The electronic component is over the first surface of the substrate. The ring structure is over the first surface of the substrate, wherein the ring structure includes a first part having a first height, and a second part recessed from the bottom surface and having a second height lower than the first height. The adhesive layer is interposed between the first part of the ring structure and the substrate, and between the second part of the ring structure and the substrate.

Semiconductor device

An integrated circuit package and a method of fabrication of the same are provided. An opening is formed in a substrate. An embedded heat dissipation feature (eHDF) is placed in the opening in the substrate and is attached to the substrate using a high thermal conductivity adhesive. One or more bonded chips are attached to the substrate using a flip-chip method. The eHDF is thermally attached to one or more hot spots of the bonded chips. In some embodiments, the eHDF may comprise multiple physically disconnected portions. In other embodiments, the eHDF may have a perforated structure.

Package with embedded heat dissipation features

A package includes a substrate having a conductive layer, and the conductive layer comprises an exposed portion. A die stack is disposed over the substrate and electrically connected to the conductive layer. A high thermal conductivity material is disposed over the substrate and contacting the exposed portion of the conductive layer. The package further includes a contour ring over and contacting the high thermal conductivity material.

3DIC packaging with hot spot thermal management features

A semiconductor device includes an electronic component, a package, a substrate and a plurality of first conductors and second conductors. The package is over the electronic component. T substrate is between the electronic component and the package. The substrate includes a first portion covered by the package, and a second portion protruding out of an edge of the package and uncovered by the package. The first conductors and second conductors are between and electrically connected to the electronic component and the substrate. A width of a second conductor of the plurality of second conductors is larger than a width of a first conductor of the plurality of first conductors, the first conductors are disposed between the second portion of the substrate and the electronic component, and the second conductors are disposed between the first portion of the substrate and the electronic component.

A package includes a package component, a device die over and bonded to the package component, a metal cap having a top portion over the device die, and a thermal interface material between and contacting the device die and the metal cap. The thermal interface material includes a first portion directly over an inner portion of the device die, and a second portion extending directly over a corner region of the device die. The first portion has a first thickness. The second portion has a second thickness greater than the first thickness.

Thermal interface material having different thicknesses in packages

A semiconductor device includes a substrate, a package, first conductors and second conductors. The substrate includes a first surface and a second surface opposite to the first surface. The package is disposed over the substrate. The first conductors are disposed over the substrate. The second conductors are disposed over the substrate, wherein the first conductors and the second conductors are substantially at a same tier, and a width of the second conductor is larger than a width of the first conductor.

Semiconductor device and method of manufacturing the same

An integrated circuit package and a method of fabrication of the same are introduced. An opening is formed in a substrate. An embedded heat dissipation feature (eHDF) is placed in the opening in the substrate and is attached to the substrate using a high thermal conductivity adhesive. One or more bonded chips are attached to the substrate using a flip-chip method. The eHDF is thermally attached to one or more hot spots of the bonded chips. In some embodiments, the eHDF may comprise multiple physically disconnected portions. In other embodiments, the eHDF may have a perforated structure.

A package includes a substrate, the substrate having a first side and a second side, the second side being opposite the first side, and a stack of dies on a first side of the substrate. The package further includes a probing pad on the first side of the substrate, the probing pad being electrically coupled to the stack of dies, and a contact pad on the second side of the substrate, the contact pad being electrically coupled to the stack of dies.

Integrated circuit package with probe pad structure

A package includes a die stack that includes at least two stacked dies, and a Thermal Interface Material (TIM). The TIM includes a top portion over and contacting a top surface of the die stack, and a sidewall portion extending from the top portion down to lower than at least one of the at least two stacked dies. A first metallic heat-dissipating feature is over and contacting the top portion of TIM. A second metallic heat-dissipating feature has a sidewall contacting a sidewall of the sidewall portion of the TIM.

Packages with thermal interface material on the sidewalls of stacked dies

Growing community of inventors

Hsin-Chu, Taiwan

Hsiang-Fan Lee