Au Optronics Corporation

Hsiang-Chih Hsiao

Ta-Wen Liao

Chia-Ming Chang

Chun-Yi Chiang

Che-Yung Lai

Zong-Long Jhang

Chou-Huan Yu

Han-Tang Chou

Ya-Ping Chang

Chi-Hung Yang

Chen-Pang Tung

Chung-Yuan Liao

Jun-Kai Chang

Shan-Fang Chen

Chia-Chi Tsai

Tzu-Min Yang

Chih-Chun Yang

Chin-Yueh Liao

Sai-Chang Liu

Yu-Hsing Liang

Ching-Yang Liu

Chi-Min Yang

Wei-Hsiang Lin

Shu-Wei Chu

Jhih-Jie Huang

An exposure apparatus is provided and adapted for exposing a photoresist layer on a layer to form a plurality of strip exposed patterns. The exposure apparatus includes a light source, a lens group and a mask. The lens group is disposed between the photoresist layer and the light source and includes a plurality of strip lens parallel to each other, wherein an overlapping region between any two neighboring strip lens is defined as a lens connecting region, and the other regions excluding the lens connecting regions are defined as lens regions. The mask is disposed between the photoresist layer and the lens group and includes a plurality of shielding patterns, wherein an outline of the shielding patterns corresponds to the strip exposed patterns, each shielding pattern has a strip opening, and an extension direction of the strip openings is substantially parallel to an extension direction of the shielding patterns.

Method of forming patterned layer, method of forming patterned photoresist layer, and active device array substrate

Exposure apparatus, method of forming patterned layer, method of forming patterned photoresist layer, active device array substrate and patterned layer

A pixel structure includes a thin film transistor device, an insulating layer disposed on the thin film transistor device, and a pixel electrode disposed on the insulating layer. The thin film transistor device includes a floating conductive pad disposed at one side of a semiconductor layer, and electrically connected to a source/drain electrode. The insulating layer has a first contact hole partially exposing the floating conductive pad. The pixel electrode is electrically connected to the floating conductive pad via the first contact hole.

Pixel structure and electrical bridging structure

A method is provided for fabricating source/drain electrodes of a thin film transistor. The method generally provides a substrate having a first gate electrode and a second gate electrode adjacent and electrically connected. The method further provides coating a photoresist layer on the metal layer, and performing an exposure process on the photoresist layer by a photomask. The method further performs a development process on the exposed photoresist layer to form a photoresist pattern layer with different thicknesses on the metal layer, and then etches the metal layer using the photoresist pattern layer as an etch mask, to form a pair of first source/drain electrodes on the first gate electrode and a pair of second source/drain electrodes on the second gate electrode.

Photomask and method for fabricating source/drain electrode of thin film transistor

A photo-mask includes a first opaque pattern, a second opaque pattern, a transparent single slit, and a translucent pattern. The transparent single slit is disposed between the first opaque pattern and the second opaque pattern, and the width of the transparent single slit is substantially between 1.5 micrometers and 2.5 micrometers. The translucent pattern is connected to the first opaque pattern and the second opaque pattern.

Method of making thin film transistor

A photomask for fabricating a thin film transistor (TFT) is disclosed. The photomask includes a translucent layer disposed on a transparent substrate and covering U-shaped and rectangular channel-forming regions of the transparent substrate. First and second light-shielding layers are disposed on the translucent layer and located at the outer and inner sides of the U-shaped channel-forming region, respectively, and third and fourth light-shielding layers are disposed on the translucent layer and located at opposite sides of the rectangular channel-forming region, respectively, to serve as source/drain-forming regions. An end of the third light-shielding layer extends to the first light-shielding layer. A plurality of first light-shielding islands is disposed on the translucent layer and located within the rectangular channel-forming region. A method for fabricating source/drain electrodes of a TFT is also disclosed.

A pixel structure fabricating method is provided. A gate is formed on a substrate. A gate insulation layer covering the gate is formed on the substrate. A channel layer, a source, and a drain are simultaneously formed on the gate insulation layer above the gate. The gate, channel layer, source, and drain form a thin film transistor (TFT). A passivation layer is formed on the TFT and the gate insulation layer. A black matrix is formed on the passivation layer. The black matrix has a contact opening above the drain and a color filter containing opening. A color filer layer is formed within the color filter containing opening through inkjet printing. A dielectric layer is formed on the black matrix and the color filter layer. The dielectric layer and the passivation layer are patterned to expose the drain. A pixel electrode electrically connected to the drain is formed.

Method for fabricating pixel structure

A method of fabricating a pixel structure includes first forming a first, a second, and a third dielectric layers over an active device and a substrate. Etching rates of the first and the third dielectric layers are lower than an etching rate of the second dielectric layer. A contact opening exposing a portion of the active device is formed in the third, the second, and the first dielectric layers. The third and the second dielectric layers are patterned to form a number of stacked structures. An electrode material layer is formed and fills the contact opening. The electrode material layer located on the stacked structures and the electrode material layer located on the first dielectric layer are separated. The stacked structures and the electrode material layer thereon are simultaneously removed to define a pixel electrode and to form at least an alignment slit in the pixel electrode.

Method of fabricating pixel structure

A pixel structure fabricating method is provided. A gate and a gate insulation layer covering the gate are formed on a substrate. A channel layer is formed on the gate insulation layer. A conductive layer is formed on the channel layer and gate insulation layer. A black matrix having a color filer layer accommodating opening is formed on the conductive layer. The black matrix includes a first block and a second block which is thicker than the first block. The conductive layer is patterned with the black matrix as a mask to form a source and a drain on the channel layer. A color filter layer is formed within the color filter layer accommodating opening through inkjet printing. A dielectric layer is formed on the black matrix and color filter layer. The dielectric layer is patterned to expose the drain. A pixel electrode electrically connected to the drain is formed.

A fabricating method for a pixel structure including following procedures is provided. First, a gate and a gate insulator layer are formed sequentially on a substrate. Next, a semiconductor layer, a conductive layer and a photosensitive black matrix having a color filter containing opening are sequentially formed on the gate insulator layer. The photosensitive black matrix includes a first portion and a second portion. A thickness of the first portion is smaller than that of the second portion. A channel, a source and a drain are formed simultaneously using the photosensitive black matrix as a mask. A passivation is formed on the substrate, and a color filer layer is formed within the color filter containing opening via an inkjet printing process and a dielectric layer is formed thereon. Next, a patterning process is applied to expose the drain. Ultimately, a pixel electrode connected to the drain is formed.

Growing community of inventors

Keelung, Taiwan

Hsiang-Chih Hsiao