Organo Corporation

M. Watanabe Co., Ltd.

Other

Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Hozumi Usui

Koji Yamanaka

Nobuyuki Yoshioka

Yoshikazu Nagamura

Organic matter and metal impurities present on the surface of a photomask are removed. Foreign matter still adhering to the surface of the photomask is removed with Hgas dissolved water. The photomask is dried. Thus provided is a method of washing a photomask in a manner which permits attaining an effect of removing foreign matter equivalent or superior to that of a conventional method with a small amount of chemical solution and reducing the amounts of chemicals and high purity water.

Method of and apparatus for washing photomask and washing solution for photomask

Method and apparatus for cleaning photomask

To provide a photomask cleaning method which brings about a high effect of removing residual sulfuric acid or foreign objects and can remove foreign objects effectively without fluctuating the transmission or other properties of the light-shielding layer (MoSiON film) in a phase shift photomask. A method of cleaning a photomask which comprises a first step of cleaning the surface of a photomask used as a master in the photolithography step in the process for the production of semiconductor device with a hot mixture of sulfuric acid and hydrogen peroxide to decompose organic objects present thereon and remove metallic impurities, a second step of removing residual sulfuric acid from the surface of said photomask, a third step of removing foreign objects attached to the surface of said photomask, and a fourth step of drying said photomask which has finished with said first, second and third steps, characterized in that said second step involves the removal of residual sulfuric acid from the surface of said photomask with anodic water and said third step involves the removal of foreign objects with cathodic water.

Growing community of inventors

Saitama, Japan

Hozumi Usui