Applied Materials, Inc.

Hoyung David Hwang

Chi-I Lang

Yong Cao

Suketu Arun Parikh

Regina Germanie Freed

Daniel Lee Diehl

Jothilingam Ramalingam

Madhur Sachan

Tejinder Singh

Michael Anthony Stolfi

Lifan Yan

Yuqiong Dai

Embodiments disclosed herein include a method of developing a metal oxo photoresist with a non-wet process. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a chamber. In an embodiment, the metal oxo photoresist comprises exposed regions and unexposed regions, and the unexposed regions comprise a higher carbon concentration than the exposed regions. In an embodiment, the method further comprises flowing a gas into the chamber, wherein the gas reacts with the unexposed regions to produce a volatile byproduct.

Dry develop process of photoresist

Methods for forming a film stack comprising a hardmask layer and etching such hardmask layer to form features in the film stack are provided. The methods described herein facilitate profile and dimension control of features through a proper profile management scheme formed in the film stack. In one or more embodiments, a method for etching a hardmask layer includes forming a hardmask layer on a substrate, where the hardmask layer contains a metal-containing material containing a metal element having an atomic number greater than 28, supplying an etching gas mixture to the substrate, and etching the hardmask layer exposed by a photoresist layer.

Film stack for lithography applications

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Cupertino, CA, United States of America

Hoyung David Hwang