Texas Instruments Corporation

Howard S Lee

Henry Litzmann Edwards

Binghua Hu

John Lin

Vladimir Bolkhovsky

Vladimir N Bolkhovsky

A double diffused region (), (), () is formed in a semiconductor substrate or in an epitaxial layer () formed on the semiconductor substrate. The double diffused region is formed by first implanting light implant specie such as boron through an opening in a photoresist layer prior to a hard bake process. Subsequent to the hard bake process, a heavy implant species such as arsenic is implanted into the epitaxial layer. During subsequent processing, such as during LOCOS formation, a double diffused region is formed by a thermal anneal. A dielectric layer () is formed on the epitaxial layer () and gate structures (), () are formed over the dielectric layer ().

Method to manufacture LDMOS transistors with improved threshold voltage control

A double diffused region (), (), () is formed in an epitaxial layer (). The double diffused region is formed by first implanting light implant specie such as boron through an opening in a photoresist layer prior to a hard bake process. Subsequent to a hard bake process heavy implant specie such as arsenic can be implanted into the epitaxial layer. During subsequent processing such as LOCOS formation the double diffused region is formed. A dielectric layer () is formed on the epitaxial layer () and gate structures (), () are formed over the dielectric layer ().

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Howard S Lee